I2P
AK
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
Rev. 02 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switch
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 100 °C; see
Figure 12
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 10 V; I
D
= 75 A;
V
DS
= 40 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 120 A; V
sup
≤
80 V;
R
GS
= 50
Ω;
unclamped
-
-
27
139
-
-
nC
nC
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
5
3
Max Unit
80
120
338
175
5.8
3.5
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
676
mJ
NXP Semiconductors
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
[1]
[2]
Continuous current is limited by package.
Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT226 (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN3R5-80ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
Type number
PSMN3R5-80ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
2 of 15
NXP Semiconductors
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤
80 V; R
GS
= 50
Ω;
unclamped
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
80
80
20
120
120
803
338
175
175
260
120
803
676
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
Continuous current is limited by package.
240
I
D
(A)
180
003aaf615
120
P
der
(%)
80
03aa16
120
(1)
40
60
0
0
50
100
150
200
T
mb
(
°
C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN3R5-80ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
3 of 15
NXP Semiconductors
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
003aaf614
10
DC
1 ms
1
10 ms
100 ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R5-80ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
4 of 15
NXP Semiconductors
PSMN3R5-80ES
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
Vertical in free air
Min
-
-
Typ
0.22
60
Max
0.44
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
003aaf613
10
-1
δ
= 0.5
0.2
0.1
0.05
tp
T
10
-2
0.02
P
δ
=
single shot
tp
t
10
-3
10
-6
T
10
-5
10
-4
10
-3
10
-2
10
-1
t
p (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN3R5-80ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
5 of 15
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