DS1225E-120-IND datasheet, PDF

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DS1225E-120-IND: DescriptionNon-Volatile SRAM Module, 8KX8, 120ns, CMOS,; Categorystorage storage; File Size198KB，8 Pages; ManufacturerDALLAS; Websitehttp://www.dalsemi.com

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DS1225E-120-IND Overview

Non-Volatile SRAM Module, 8KX8, 120ns, CMOS,

DS1225E-120-IND Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	DALLAS
Reach Compliance Code	unknown
Maximum access time	120 ns
Other features	BATTERY BACK-UP
JESD-30 code	R-XDMA-T28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	NON-VOLATILE SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8KX8
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Maximum slew rate	0.085 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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DS1225E-120-IND Related Products

	DS1225E-120-IND	DS1225E-70-IND	DS1225D-70-IND	DS1225D-120-IND
Description	Non-Volatile SRAM Module, 8KX8, 120ns, CMOS,	Non-Volatile SRAM Module, 8KX8, 70ns, CMOS,	Non-Volatile SRAM Module, 8KX8, 70ns, CMOS,	Non-Volatile SRAM Module, 8KX8, 120ns, CMOS,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	DALLAS	DALLAS	DALLAS	DALLAS
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	120 ns	70 ns	70 ns	120 ns
Other features	BATTERY BACK-UP	BATTERY BACK-UP	BATTERY BACK-UP	BATTERY BACK-UP
JESD-30 code	R-XDMA-T28	R-XDMA-T28	R-XDMA-T28	R-XDMA-T28
JESD-609 code	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	28	28	28	28
word count	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	8KX8	8KX8	8KX8	8KX8
Exportable	YES	YES	YES	YES
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.6	DIP28,.6	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.085 mA	0.085 mA	0.085 mA	0.085 mA
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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