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3KP13

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size293KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
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3KP13 Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

3KP13 Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
Reach Compliance Codecompli
Base Number Matches1
TVS
3KP
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
3000 WATT PEAK POWER 8.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
3000 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
R-6
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.360 (9.1)
.340 (8.6)
.360 (9.1)
.340 (8.6)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
DEVICES
FOR
BIPOLAR
APPLICATIONS
For Bidirectional use C or CA suffix for types 3KP5.0 thru 3KP110
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Pulse Power Dissipation with a 10/1000uS
waveform (Note 1, FIG.1)
Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3)
Steady State Power Dissipation at T
L
= 75 C lead lengths
0.375” (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) (Note 3)
Operating and Storage Temperature Range
o
o
o
SYMBOL
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
, T
STG
VALUE
Minimum 3000
SEE TABLE 1
8.0
250
-55 to + 175
UNITS
Watts
Amps
Watts
Amps
0
C
2009-02
REV: O
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25 C per Fig.2.
2. Mounted on copper pad area of 0.8 X 0.8” ( 20 X 20mm ) per Fig. 5
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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