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3KP8.0A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size293KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
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3KP8.0A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

TVS
3KP
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
3000 WATT PEAK POWER 8.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
3000 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
R-6
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.360 (9.1)
.340 (8.6)
.360 (9.1)
.340 (8.6)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
DEVICES
FOR
BIPOLAR
APPLICATIONS
For Bidirectional use C or CA suffix for types 3KP5.0 thru 3KP110
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Pulse Power Dissipation with a 10/1000uS
waveform (Note 1, FIG.1)
Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3)
Steady State Power Dissipation at T
L
= 75 C lead lengths
0.375” (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) (Note 3)
Operating and Storage Temperature Range
o
o
o
SYMBOL
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
, T
STG
VALUE
Minimum 3000
SEE TABLE 1
8.0
250
-55 to + 175
UNITS
Watts
Amps
Watts
Amps
0
C
2009-02
REV: O
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25 C per Fig.2.
2. Mounted on copper pad area of 0.8 X 0.8” ( 20 X 20mm ) per Fig. 5
3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
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