HIGH-POWER GaAlAs IR EMITTERS
OD-880F
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
.041
1.00
MIN.
GLASS
DOME
ANODE
(CASE)
.209
.220
.015
.100
.030
.040
CATHODE
.197
.205
.036
45°
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Radiant Intensity, I
e
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
Δλ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
TEST CONDITIONS
I
F
= 100mA
CE
MB
ER
MIN
15
120
TYP
17
135
880
80
8
1.55
5
30
17
0.5
0.5
190mW
100mA
3A
5V
260°C
-55°C to 100°C
100°C
350°C/W Typical
115°C/W Typical
20
MAX
1.9
.017
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
DE
I
F
= 50mA
I
F
= 100mA
I
R
= 10μA
V
R
= 0V
LI
FE
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current
Reverse Voltage
Peak Forward Current (10μs, 400Hz)
2
EN
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
D
Lead Soldering Temperature (1/16" from case for 10sec)
OF
Power Dissipation
1
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
13
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
.183
.186
.152
.154
HIGH-POWER GaAlAs IR EMITTERS
200
180
POWER DISSIPATION (mW)
160
140
120
100
80
60
40
20
0
25
50
75
AMBIENT TEMPERATURE (°C)
100
NO
HEAT SINK
INFINITE
HEAT SINK
OD-880F
10
PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
t = 10μs
1
t = 100μs
t = 500μs
t
T
MAXIMUM RATINGS
0.1
t
Ip
T
D=
0.01
0.01
0.1
1
DUTY CYCLE, D (%)
TYPICAL CHARACTERISTICS
100
DEGRADATION CURVE
I
F
= 20mA
100
RADIATION PATTERN
90
80
70
60
T
CASE
= 25°C
NO PRE BURN-IN PERFORMED
50
10
1
10
2
10
3
STRESS TIME, (hrs)
DE
CE
MB
ER
RELATIVE POWER OUTPUT (%)
80
I
F
= 50mA
60
40
I
F
= 100mA
20
10
4
10
5
0
–25 –20
–15
–10
–5
0
5
10
BEAM ANGLE,
θ(deg)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
RELATIVE POWER OUTPUT
5
6
0.5
–50
–25
1,000
POWER OUTPUT, P (mW)
o
100
10
950
1,000
1
10
RELATIVE POWER OUTPUT (%)
FORWARD I-V CHARACTERISTICS
4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, I
F
(amps)
3
2
1
OF
0
0
LI
1
FE
2
3
4
FORWARD VOLTAGE, V (volts)
F
0
25
50
AMBIENT TEMPERATURE (°C)
SPECTRAL OUTPUT
POWER OUTPUT vs FORWARD CURRENT
100
RELATIVE POWER OUTPUT (%)
EN
D
80
60
40
20
0
750
800
850
900
WAVELENGTH,
λ(nm)
100
1,000
FORWARD CURRENT, I
F
(mA)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
20
13
10
100
15
20
25
75
100
DC
PULSE
10μs, 100Hz
10,000
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