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WSCD215H

Description
Schottky Barrier Diode
File Size54KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
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WSCD215H Overview

Schottky Barrier Diode

ZOWIE
WSCD215H
AND
WSCD220H
FEATURES
* Halogen-free type
*
*
*
*
*
*
Compliance to RoHS product
Lead less chip form, no lead damage
Lead-free solder joint, no wire bond & lead frame
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Schottky Barrier Diode
(150V~200V / 2.0A)
OUTLINE DIMENSIONS
Case : 2010
4.5 ± 0.1
2.20 ± 0.1
Unit : mm
0.05
0
0.5
0.95 ± 0.2
0.95 ± 0.2
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
+ 0.2
0.96
- 0.1
JEDEC : SMA
DO-214AC
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.02 gram
MARKING
Cathode mark
Series code
SCD
215
.
Amps class
Voltage
class
Halogen-free type
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
Voltage class : 15 = 150V, 20 = 200V
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
Conditions
WSCD215H
150
2.0
WSCD220H
200
Unit
V
A
A
o
o
8.3ms single half sine-wave
50
-55 to +150
-55 to +150
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
I
F
= 2.0A
Forward voltage (NOTE 1)
V
F
I
F
= 2.0A
Repetitive peak reverse current
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
o
Type
WSCD215H
Min.
-
Typ.
0.83
Max.
0.88
Unit
V
WSCD220H
-
-
-
-
-
0.86
1.0
110
88
28
0.90
50
-
-
-
o
o
V
uA
pF
C/W
C/W
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
REV.
0
2011/05

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