DCR2760M85
Phase Control Thyristor
DS6078-1 September 2012 (LN 29818)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
8500V
2765A
32500A
1500V/µs
200A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
8500
8000
7500
7000
Conditions
DCR2760M85*
DCR2760M80
DCR2760M75
DCR2760M70
T
vj
= -40°C to 125°C,
I
DRM
= I
RRM
= 300mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
o
o
*8200V @ -40 C, 8500V @ 0 C
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR2760M85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR2760M85
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2765
4343
4083
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°C
V
R
= 0
Max.
32.5
5.28
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 83.0kN
(with mounting compound)
T
vj
T
stg
F
m
Virtual junction temperature
Storage temperature range
Clamping force
Blocking V
DRM
/ V
RRM
Double side
Single side
Min.
-
-
-
-
-
-
-55
74.0
Max.
0.00518
0.01012
0.01080
0.001
0.002
125
125
91.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
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DCR2760M85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°C
To 67% V
DRM
, T
j
= 125°C, gate open
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 125°C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
300
1500
100
200
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
500 to 1600A at T
case
= 125°C
1600 to 4000A at T
case
= 125°C
500A to 1600A at T
case
= 125°C
1600A to 4000A at T
case
= 125°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
-
-
0.9
1.18
0.65
0.46
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
I
T
= 3000A, T
j
= 125°C,
V
R
= 200V, dI/dt = 1A/µs,
dV
DR
/dt = 20V/µs linear
1000
µs
Q
S
Stored charge
I
T
= 3000A, T
j
= 125°C, dI/dt – 1A/µs,
V
Rpeak
~5100V, V
R
~ 3400V
T
j
= 25°C, V
D
= 5V
5150
7950
µC
I
L
Latching current
-
3
A
I
H
Holding current
T
j
= 25°C, R
G-K
=
,
I
TM
= 500A, I
T
= 5A
-
300
mA
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DCR2760M85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
Max.
1.5
0.4
400
10
Units
V
V
mA
mA
CURVES
7000
Max 125ºC
6000
Min 125ºC
max 25ºC
5000
min 25CºC
Instantaneous on-state current, I
T
- (A)
4000
3000
2000
1000
0
0.5
1.5
2.5
3.5
4.5
Instantaneous forward voltage drop, V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = -0.224010
B = 0.1725829
C = 0.000292
D = 0.01039
these values are valid for T
j
= 125°C for I
T
500A to 4200A
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DCR2760M85
SEMICONDUCTOR
130
16
14
120
110
180
120
90
60
Maximum case temperature, T case (
o
C )
4000
Mean power dissipation - (kW)
100
90
12
10
8
6
4
2
0
0
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
180
120
90
60
30
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
130
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
16
120
180
120
Maximum heatsink temperature, T Heatsink - (
o
C )
110
100
14
90
60
Mean power dissipation - (kW)
12
10
8
6
4
2
0
0
90
80
70
60
50
40
30
20
10
0
d.c.
180
120
90
60
30
0
1000
2000
3000
4000
1000
2000
3000
4000
Mean on-state current, I
T(AV)
- (A)
5000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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