DCR4500A42
Phase Control Thyristor
Preliminary Information
DS5942-3 July 2012 (LN 29654)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
4200V
4500A
60800A
2000V/µs
200A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
4200
4000
3600
Conditions
DCR4500A42*
DCR4500A40
DCR4500A36
T
vj
= -40°C to 125°C,
I
DRM
= I
RRM
= 300mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
o
o
*4100V @ -40 C, 4200V @ 0 C
Outline type code: A
(See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR4500A42
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Fig. 1 Package outline
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DCR4500A42
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
4500
7068
6330
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°C
V
R
= 0
Max.
60.8
18.48
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 83.0kN
(with mounting compound)
T
vj
T
stg
F
m
Virtual junction temperature
Storage temperature range
Clamping force
Blocking V
DRM
/ V
RRM
Double side
Single side
Min.
-
-
-
-
-
-
-55
74.0
Max.
0.00603
0.01024
0.01467
0.001
0.002
125
125
91.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
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DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°C
To 67% V
DRM
, T
j
= 125°C, gate open
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 125°C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
300
2000
200
500
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
500 to 2200A at T
case
= 125°C
2200 to 8000A at T
case
= 125°C
500A to 2200A at T
case
= 125°C
2200A to 8000A at T
case
= 125°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
-
-
0.75
0.92
0.205
0.122
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
I
T
= 5000A, T
j
= 125°C,
V
R
= 200V, dI/dt = 5A/µs,
dV
DR
/dt = 20V/µs linear
900
µs
Q
S
Stored charge
I
T
= 3000A, T
j
= 125°C, dI/dt – 1A/µs,
V
Rpeak
~2500V, V
R
~ 1700V
2920
4875
µC
I
RR
Reverse recovery current
42
57
A
I
L
Latching current
T
j
= 25°C, V
D
= 5V
-
3
A
I
H
Holding current
T
j
= 25°C, R
G-K
=
,
I
TM
= 500A, I
T
= 5A
-
300
mA
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DCR4500A42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
Max.
1.5
0.4
300
10
Units
V
V
mA
mA
CURVES
9000
8000
Instantaneous on-state current
F
I - (A)
7000
6000
5000
4000
3000
2000
1000
0
0.5
Vtm max 125ºC
Vtm min 125ºC
Vtm max 25ºC
Vtm min 25ºC
1
1.5
2
Instantaneous on-state voltage V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = -0.208640
B = 0.171688
C = 0.000113
D = -0.003842
these values are valid for T
j
= 125°C for I
T
500A to 8000A
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10
180
120
90
60
30
130
120
Maximum case temperature, T (
o
C )
case
110
100
90
80
70
60
50
40
30
20
10
Mean power dissipation - (kW)
8
180
120
90
60
30
6
4
2
0
0
500
1000
1500
Mean on-state current, I
T(AV)
- (A)
2000
0
0
1000
2000
3000
4000
5000
Mean on-state current, I
T(AV)
- (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
125
T
Maximum heatsink temperature,
Heatsink
- ( ° C)
Mean power dissipation - (kW)
100
180
120
90
60
30
16
14
12
10
8
6
4
2
0
d.c.
180
120
90
60
30
75
50
25
0
0
1000
2000
3000
4000
5000
Mean on-state current, I
T(AV)
- (A)
0
1000
2000
3000
4000
5000
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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