DCR1710F18
Phase Control Thyristor
DS6028-1 April 2011 (LN28239)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
1800 V
1710 A
25000 A
1000 V/µs
200 A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
1800
1600
1400
1200
Conditions
DCR1710F18
DCR1710F16
DCR1710F14
DCR1710F12
T
vj
= -40°C to 125°C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+100V
respectively
Outline type code: F
(See Package Details for further information)
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1710F18
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Fig. 1 Package outline
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DCR1710F18
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1710
2680
2420
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°C
V
R
= 0
Max.
25.0
3.13
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
Double side cooled
Blocking V
DRM
/
VRRM
DC
DC
Min.
-
-
-
-40
18
Max.
0.02
0.005
125
140
26
Units
°C/W
°C/W
°C
°C
kN
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DCR1710F18
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°C
To 67% V
DRM
, T
j
= 125°C, gate open
From 67% V
DRM
to 2000A
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 125°C
Repetitive 50Hz
Non-repetitive
Min.
-
1000
-
-
Max.
150
-
200
1000
Units
mA
V/µs
A/µs
A/µs
V
T
V
T(TO)
r
T
t
gd
On-state voltage
Threshold voltage
On-state slope resistance
Delay time
I
T
= 1500A, T
case
= 125°C
T
case
= 125°C
T
case
= 125°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
1.18
0.88
0.20
3.0
V
V
m
µs
t
q
Turn-off time
T
j
= 125°C, V
R
= 100V, dI/dt = 10A/µs,
dV
DR
/dt = 20V/µs linear to 67% V
DRM
-
250
µs
Q
S
I
RR
I
L
I
H
Stored charge
Reverse recovery current
Latching current
Holding current
I
T
= 2000A, tp = 1000us,T
j
= 125°C,
dI/dt =10A/µs,
T
j
= 25°C,
T
j
= 25°C,
-
-
-
-
2500
150
1
200
µC
A
A
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At 40% V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
At 40% V
DRM,
T
case
= 125°C
Max.
3
TBD
300
TBD
Units
V
V
mA
mA
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DCR1710F18
SEMICONDUCTOR
CURVES
10000
9000
Instantaneous on-state current, I
T
- (A)
8000
7000
6000
5000
4000
3000
2000
1000
0
0
Tj=25°C
Tj=125°C
1
2
Instantaneous on-state voltage,V
T
- (V)
3
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where A = 0.74902
B = -0.0330895
C = 0.000076813
D = 0.0144218
These values are valid for T
j
= 125°C
Fig.2 Maximum &minimum on-state characteristics
0.03
Double side cooled
t
R
thjc
t
½
R
thi
1
e
i
i
½
1
n
Thermal Impedance Zth(j-c) (°C/W)
0.02
i
1
0.01
2
3
4
0
0.001
0.01
0.1
Time ( s )
1
10
100
τ
i
(s)
0.6894
0.0872
0.0217
0.0043
R
thi
(°C/kW)
13.267
4.05
1.585
1.102
Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W)
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DCR1710F18
SEMICONDUCTOR
3000
130
120
Maximum case temperature, T
case
- (°C)
110
100
2500
Mean power dissipation - (W)
2000
90
80
1500
70
60
50
40
30
20
10
0
0
180
120
90
60
30
1000
180
120
90
60
30
500
0
0
400
800
1200
Mean on-state current, I
T(AV)
- (A)
1600
400
800
1200
Mean on-state current, I
T(AV)
- (A)
1600
Fig.4 On-state power dissipation – sine wave
Fig.5 Maximum permissible case temperature,
double side cooled – sine wave
130
120
110
Maximum case temperature, Tcase - (°C)
3000
2500
Mean power dissipation - (W)
100
90
80
70
2000
60
50
40
30
d.c.
180
120
90
60
30
1500
1000
d.c.
180
120
90
60
30
0
400
800
1200
Mean on-state current, I
T(AV)
- (A)
1600
20
10
0
0
500
0
400
800
1200
Mean on-state current, I
T(AV)
- (A)
1600
Fig.6 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.7 On-state power dissipation – rectangular wave
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