AOZ8208
Eight-line TVS Diode Array
General Description
The AOZ8208 is a transient voltage suppressor diode
array designed to protect data lines from high transient
conditions and ESD. This state-of-the-art device utilizes
AOS leading edge Trench Vertical Structure [TVS]
2
™
technology for superior clamping performance.
This device incorporates eight TVS diodes in a single
package. During transient conditions, the TVS diodes
direct the transient to ground. They may be used to
meet the ESD immunity requirements of IEC 61000-4-2,
Level 4 (±15kV air, ±8kV contact discharge).
The AOZ8208 is RoHS compliant. The DFN-8 package
is rated over a -40°C to +85°C ambient temperature
range.
The very small DFN-8 1.8 x 1.2 x 0.55mm package
makes it ideal for applications where PCB space is a
premium. The small size and high ESD protection
makes it ideal for protecting high speed video and data
communication interfaces.
Features
ESD protection for high-speed data lines:
–
Exceeds: IEC 61000-4-2 (ESD) ±15kV (air),
±15kV (contact)
–
IEC61000-4-5 (Lightning) 5A (8/20μS)
–
Human Body Model (HBM) ±20kV
Trench Vertical Structure [TVS]
2
™ based technology
used to achieve excellent ESD clamping performance
Small package saves board space
Low insertion loss
Protects eight unidirectional I/O lines
Low clamping voltage
Low operating voltage: 5.0V
Green product, Pb-free
Applications
Portable handheld devices
Keypads, data lines
Notebook computers
Digital Cameras
Portable GPS
MP3 players
Typical Applications
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
Pin Configuration
1
8
2
GND
3
7
6
4
5
Unidirection Protection of Eight Lines
Top View
Rev. 1.0 March 2010
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Page 1 of 8
AOZ8208
Ordering Information
Part Number
AOZ8208DI-05
Ambient Temperature Range
-40°C to +85°C
Package
DFN-8
Environmental
Green Product
RoHS Compliant
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit
www.aosmd.com/web/quality/rohs_compliant.jsp
for additional information.
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Peak Pulse Current (I
PP
), t
P
= 8/20µs
Storage Temperature (T
S
)
ESD Rating per IEC61000-4-2, Contact
ESD Rating per IEC61000-4-2,
ESD Rating per Human Body
Air
(1)
Model
(2)
(1)
Rating
5A
-65°C to +150°C
±15kV
±15kV
±20kV
Notes:
1. IEC 61000-4-2 discharge with C
Discharge
= 150pF, R
Discharge
= 330
Ω
.
2. Human Body Discharge per MIL-STD-883, Method 3015 C
Discharge
= 100pF, R
Discharge
= 1.5k
Ω
.
Maximum Operating Ratings
Parameter
Junction Temperature (T
J
)
Rating
-40°C to +125°C
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
I
PP
V
CL
V
RWM
I
R
V
BR
I
F
V
F
P
PK
C
J
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current
Breakdown Voltage
Forward Current
Forward Voltage
Peak Power Dissipation
Capacitance @ V
R
= 0 and f = 1MHz
V
CL
V
BR
V
RWM
Diagram
I
I
F
I
R
V
F
I
T
V
I
PP
Device
AOZ8208DI-05
Device V
RWM
(V)
Marking
Max.
D
5
V
BR
(V)
Min.
6.0
I
R
(µA)
Max.
0.1
V
F
(V)
Typ.
0.85
C
J
(pF) C
J
(pF)
I
PP
= 1A I
PP
= 5A I
PP
= 12A Typ.
Max.
7.0
8.0
9.0
10
12
V
CL
Max.
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AOZ8208
Typical Performance Characteristics
Typical Variation of C
IN
vs. V
R
Normalized Input Capacitance
Clamping Voltage vs. Peak Pulse Current
10
(t
period
= 100ns, t
r
= 1ns)
1.20
1.00
0.80
0.60
0.40
0.20
0.00
(f = 1MHz, T = 25°C)
Clamping Voltage, V
CL
(V)
8
6
4
2
0
0
1
2
3
4
5
0
2
4
6
8
10
12
Input Voltage (V)
Peak Pulse Current, I
PP
(A)
Forward Voltage vs. Forward Current
8
(t
period
= 100ns, t
r
= 1ns)
I/O – Gnd Insertion Loss (S21) vs. Frequency
5
0
Forware Voltage (V)
6
Insertion Loss (dB)
-5
-10
-15
-20
4
2
0
0
2
4
6
8
10
-25
12
1
10
100
Frequency (MHz)
1000
10000
Forward Current (A)
Crosstalk (I/O–I/O) vs. Frequency
0
-20
Insertion Loss (dB)
-40
-60
-80
-100
-120
1
10
100
Frequency (MHz)
1000
10000
Rev. 1.0 March 2010
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AOZ8208
Applications Information
Device Connection for Protection of Eight
Unidirectional Data Lines
These devices are designed to protect up to eight
unidirectional data lines. The device is connected as
follows.
Unidirectional protection of eight I/O lines is achieved
by connecting pins 1 through 8 to the data lines.
The ground connection should be made directly to the
ground plane for best results. The path length is kept
as short as possible to reduce the effects of
parasitic inductance in the board traces.
GND
Circuit Diagram
I/O1
I/O2
I/O3
I/O4
1
8
1
2
3
4
5
6
7
8
2
GND
7
Circuit Board Layout Recommendations for
Suppression of ESD
Good circuit board layout is critical for the suppression of
ESD induced transients. The following guidelines are
recommended:
Place the TVS near the input terminals or connectors
to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
I/O5
I/O6
I/O7
I/O8
3
6
4
5
Protection of Eight Unidirection Lines
Rev. 1.0 March 2010
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Page 4 of 8
AOZ8208
Package Dimensions, DFN 1.8 x 1.2, 8L
D1
D
b
e
D2
E
L
Pin 1
Marking
E1
TOP VIEW
BOTTOM VIEW
Pin 1 ID
(C0.2x45°)
A
SIDE VIEW
A1
A3
Dimensions in millimeters
Symbols
A
Min.
0.50
0.00
Nom.
0.55
Max.
0.60
Dimensions in inches
Symbols
A
A1
A3
b
D
D1
D2
E
E1
e
L
Min.
0.020
0.000
Nom.
0.022
Max.
0.024
RECOMMENDED LAND PATTERN
0.20
0.20
1.00
0.20
0.20
0.20
A1
A3
b
D
D1
D2
E
E1
e
L
—
0.05
0.152 Ref.
0.15
0.20
0.25
1.80
1.00
0.200 Ref.
1.15
1.20
0.25
0.30
1.75
0.95
1.85
1.05
1.25
0.35
—
0.002
0.006 Ref.
0.006 0.008 0.010
0.069
0.037
0.071 0.073
0.039 0.041
0.008 Ref.
0.045 0.047 0.049
0.010 0.012 0.014
0.016 BSC
0.008 0.010 0.012
0.30
1.00
0.40 BSC
0.20
0.25
0.30
0.40
0.20
0.30
Notes:
1. Controlling dimension is millimeter, converted inch dimensions are not necessaily exact.
2. Warpage shall not exceed 0.10mm.
3. Marking is for package orientation reference only.
Rev. 1.0 March 2010
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