FSYC055D3 datasheet, PDF - EEWORLD Datasheet

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FSYC055D3: DescriptionPower Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size270KB，8 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FSYC055D3 Overview

Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

FSYC055D3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	70 A
Maximum drain current (ID)	70 A
Maximum drain-source on-resistance	0.012 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	162 W
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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FSYC055D3 Related Products

	FSYC055D3	FSYC055R3	FSYC055D1	FSYC055R4
Description	Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 70A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 70A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 70A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	70 A	70 A	70 A	70 A
Maximum drain current (ID)	70 A	70 A	70 A	70 A
Maximum drain-source on-resistance	0.012 Ω	0.019 Ω	0.019 Ω	0.019 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	162 W	162 W	162 W	162 W
Maximum pulsed drain current (IDM)	200 A	200 A	200 A	200 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	Harris	Harris	-	Harris

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