BC307/308/309
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
1
TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Parameter
Collector-Emitter Voltage
: BC307
: BC308/309
Collector-Emitter Voltage
: BC307
Value
-50
-30
-45
-25
-5
-100
500
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
V
CEO
: BC308/309
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
©2000 Fairchild Semiconductor International
Rev. B, January 2001
BC307/308/309
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC307
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
: BC237/238
: BC239
: BC239
V
CE
= -5V, I
C
= -0.2mA,
R
G
=2KΩ, f=1KHz
V
CE
= -5V, I
C
= -0.2mA
R
G
=2KΩ, f=30~15KHz
10
4
4
dB
dB
dB
Test Condition
I
C
= -2mA, I
B
=0
Min.
-45
-25
I
C
= -10µA, V
BE
=0
-50
-30
I
E
= -10µA, I
C
=0
V
CE
= -45V, V
BE
=0
V
CE
= -25V, V
BE
=0
V
CE
= -5V, I
C
= -2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA, f=50MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
12
-0.55
120
-0.5
-0.7
-0.85
-0.62
130
6
-0.7
-5
-2
-2
-15
-15
800
-0.3
V
V
V
V
V
MHz
pF
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
2
h
FE
Classification
Classification
h
FE
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
©2000 Fairchild Semiconductor International
Rev. B, January 2001
BC307/308/309
Typical Characteristics
-50
-45
1000
I
C
[mA], COLLECTOR CURRENT
I
B
= -400
μA
I
B
= -350
μA
I
B
= -300
μA
I
B
= -250
μA
I
B
= -200
μA
I
B
= -150
μA
I
B
= -100
μA
I
B
= -50
μA
1
-0.1
V
CE
= -5V
-40
-35
-30
-25
-20
-15
-10
-5
h
FE
, DC CURRENT GAIN
100
10
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
I
C
= -10 I
B
V
CE
= -5V
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-1
-10
-100
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Capacitance
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
f=1MHz
I
E
= 0
V
CE
= -5V
C
ob
[pF], CAPACITANCE
10
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. B, January 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
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No Identification Needed
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©2000 Fairchild Semiconductor International
Rev. E
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