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BTS115

Description
Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
CategoryDiscrete semiconductor    The transistor   
File Size51KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BTS115 Overview

Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

BTS115 Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)12.5 A
Maximum drain current (ID)12.5 A
Maximum drain-source on-resistance0.125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)50 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

BTS115 Related Products

BTS115
Description Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Maker Infineon
Reach Compliance Code compliant
ECCN code EAR99
Other features LOGIC LEVEL COMPATIBLE
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage 50 V
Maximum drain current (Abs) (ID) 12.5 A
Maximum drain current (ID) 12.5 A
Maximum drain-source on-resistance 0.125 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 50 A
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
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