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BDX54

Description
Bipolar Transistors;PNP;-8A;-45V;TO-220
CategoryDiscrete semiconductor   
File Size216KB,2 Pages
ManufacturerInchange Semiconductor
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Bipolar Transistors;PNP;-8A;-45V;TO-220

BDX54 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon PNP Darlington Power Transistor
BDX54
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(sus)
= -45V(Min)
·High
DC Current Gain
: h
FE
= 750(Min) @I
C
= -3A
·Low
Collector Saturation Voltage
: V
CE(sat)
= -2.0 V(Max) @ I
C
= -3.0 A
·Complement
to Type BDX53
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-45
-45
-5
-8
-12
-0.2
60
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.92
UNIT
℃/W
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www.iscsemi.com
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