AON7436
20V N-Channel MOSFET
General Description
The AON7436 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
R
DS(ON)
(at V
GS
=1.8V)
20V
23A
< 19mΩ
< 22mΩ
< 32mΩ
< 50mΩ
100% R
g
Tested
DFN 3x3A
Top View
Bottom View
1
2
3
4
Top View
8
7
6
5
D
G
Pin 1
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Power Dissipation
Power Dissipation
B
C
Maximum
20
±12
23
15
50
9
7
16.7
7
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
6.2
Max
40
75
7.5
Units
°
C/W
°
C/W
°
C/W
Rev 0: August 2010
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Page 1 of 6
AON7436
C
Electrical Characteristics (T
J
=25° unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=9A
T
J
=125°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=7A
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=2A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=9A
I
S
=1A,V
GS
=0V
0.4
50
15.5
22
17.5
23
32
20
0.7
1
15
420
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
65
45
0.8
525
95
75
1.7
12.5
V
GS
=10V, V
DS
=10V, I
D
=9A
6
1
2
3
V
GS
=10V, V
DS
=10V, R
L
=1.1Ω,
R
GEN
=3Ω
I
F
=9A, dI/dt=100A/µs
7.5
20
6
14
6
17
630
125
105
2.6
15
19
27
22
32
50
0.75
Min
20
1
5
100
1.1
Typ
Max
Units
V
µA
±nA
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=9A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t
≤
10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2010
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Page 2 of 6
AON7436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
4.5V
2.5V
15
20
V
DS
=5V
30
I
D
(A)
I
D
(A)
1.8V
20
10
10
V
GS
=1.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
60
50
R
DS(ON)
(mΩ)
Ω
40
V
GS
=1.8V
30
20
10
0
5
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Normalized On-Resistance
5
125°C
25°C
0
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=4.5V
I
D
=7A
V
GS
=2.5V
I
D
=6A
17
5
V
GS
=1.8V
I
D
=2A
2
10
V
GS
=10V
I
D
=9A
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
45
I
D
=9A
40
35
R
DS(ON)
(mΩ)
Ω
I
S
(A)
30
25
20
15
10
0
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
25°C
125°C
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
40
125°C
25°C
Rev 0: August 2010
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Page 3 of 6
AON7436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=10V
I
D
=9A
8
Capacitance (pF)
800
C
iss
600
1000
V
GS
(Volts)
6
4
400
C
oss
200
C
rss
0
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
2
0
0
6
9
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3
15
0
100.0
200
10.0
I
D
(Amps)
R
DS(ON)
10µs
10µs
160
T
J(Max)
=150°C
T
C
=25°C
100µs
Power (W)
1.0
DC
1ms
10ms
120
80
40
0
0.1
T
J(Max)
=150°C
T
C
=25°C
17
5
2
10
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=7.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2010
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Page 4 of 6
AON7436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
Power Dissipation (W)
20
Current rating I
D
(A)
0
75
100
125
T
CASE
(°
C)
Figure 12: Power De-rating (Note F)
25
50
150
20
15
15
10
10
5
5
0
0
0
75
100
125
T
CASE
(°
C)
Figure 13: Current De-rating (Note F)
25
50
150
10000
T
A
=25°C
1000
100
17
5
2
10
Power (W)
10
1
0.00001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
0.001
0
1000
18
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
P
D
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2010
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Page 5 of 6
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