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AON7452

Description
MOSFET N-CH 100V 2.5A 8DFN
Categorysemiconductor    Discrete semiconductor   
File Size243KB,7 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet View All

AON7452 Overview

MOSFET N-CH 100V 2.5A 8DFN

AON7452
100V N-Channel MOSFET
SDMOS
TM
General Description
The AON7452 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=7V)
100V
5.5A
< 310mΩ
< 370mΩ
100% UIS Tested
100% R
g
Tested
DFN 3x3 EP
Top View
Bottom View
D
Top View
1
2
3
4
8
7
6
5
G
S
Pin 1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
5.5
3.5
12
2.5
2
2.5
0.3
17
7
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
6
Max
40
75
7.2
Units
°
C/W
°
C/W
°
C/W
Rev 1: April 2011
www.aosmd.com
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