AON7528
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
Typical ESD protection
30V
50A
< 2mΩ
< 3.4mΩ
HBM Class 2
Application
• DC/DC Converters
100% UIS Tested
100% R
g
Tested
Top View
DFN 3x3 EP
Bottom View
S
S
S
G
Pin 1
1
2
3
4
Top View
D
D
D
D
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.05mH
V
DS
Spike
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
50
39
200
45
36
50
63
36
83
33
6.2
4
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
100ns
C
T
C
=25°
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
A
mJ
V
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16
45
1.1
Max
20
55
1.5
Units
°
C/W
°
C/W
°
C/W
Rev0: May 2012
www.aosmd.com
Page 1 of 6
AON7528
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
G
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
1
5
±10
1.2
T
J
=125°
C
1.8
1.6
2.3
2.6
81
0.7
1
50
2895
2.2
2
2.9
3.4
µA
µA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.5
V
GS
=0V, V
DS
=15V, f=1MHz
1439
149
1.0
45.4
1.5
60
29
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
1in
2
V
GS
=10V, V
DS
=15V, I
D
=20A
21.3
8.0
9.0
8.5
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
5.0
31.0
7.5
22.3
54
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2012
www.aosmd.com
Page 2 of 6
AON7528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
4.5V
50
I
D
(A)
40
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
4
Normalized On-Resistance
1.6
V
GS
=10V
I
D
=20A
V
GS
=2.5V
10V
3V
50
I
D
(A)
40
30
20
10
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
3.5V
80
70
60
V
DS
=5V
3
R
DS(ON)
(mΩ)
Ω
V
GS
=4.5V
1.4
2
1.2
1
V
GS
=10V
1
17
5
V
GS
=4.5V
2
I
D
=20A
10
0
0
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
5
I
D
=20A
4
R
DS(ON)
(mΩ)
Ω
1.0E+02
1.0E+01
1.0E+00
40
125°C
3
I
S
(A)
125°C
1.0E-01
1.0E-02
25°C
2
25°C
1
1.0E-03
1.0E-04
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev0: May 2012
www.aosmd.com
Page 3 of 6
AON7528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
50
0
0
C
rss
10
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
10µs
500
400
Power (W)
300
200
100
0
0.01
0.1
1
V
DS
(Volts)
10
100
0.0001
T
J(Max)
=150°C
T
C
=25°C
R
DS(ON)
10µs
100µs
1ms
DC
1.0
0.1
0.0
10ms
T
J(Max)
=150°C
T
C
=25°C
17
5
2
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=1.5°C/W
40
0.1
P
D
0.01
T
on
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: May 2012
www.aosmd.com
Page 4 of 6
AON7528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
Power Dissipation (W)
80
70
60
50
40
30
20
10
0
0
75
100
125
T
CASE
(°
C)
Figure 12: Power De-rating (Note F)
25
50
150
10
0
0
75
100
125
T
CASE
(°
C)
Figure 13: Current De-rating (Note F)
25
50
150
Current rating I
D
(A)
50
40
30
20
60
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=55°C/W
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: May 2012
www.aosmd.com
Page 5 of 6
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