AON7820
20V Dual N-Channel MOSFET
General Description
The AON7820 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
SS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
S
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=3.5V)
R
SS(ON)
(at V
GS
=2.5V)
Typical ESD protection
20V
35A
< 16mΩ
< 17mΩ
< 20mΩ
HBM Class 2
Top View
DFN 3x3 EP
Bottom View
D
D
Top View
S1
G1
S2
G2
D1
D1
D2
D2
S
S
G
G
Pin 1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Power Dissipation
Power Dissipation
B
C
Maximum
20
±12
35
22
80
11
9
31
12.5
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
S
I
SM
I
SSM
P
D
P
DSM
T
J
, T
STG
A
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
3.2
Max
40
75
4
Units
°
C/W
°
C/W
°
C/W
Rev 0: August 2011
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Page 1 of 6
AON7820
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
S
=11A
R
SS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
=3.5V, I
S
=10A
V
GS
=2.5V, I
S
=9A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=11A
I
S
=1A,V
GS
=0V
0.4
80
13
18.7
13.8
15.6
65
0.58
1
35
1375
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
14
V
GS
=4.5V, V
DS
=10V, I
S
=11A
215
105
1720
312
177
2.65
18.2
9.5
7.6
1.65
V
GS
=4.5V, V
DS
=10V, R
L
=0.9Ω,
R
GEN
=3Ω
I
F
=11A, dI/dt=500A/µs
11
17
3.7
5.4
10
14.5
21.5
18
26
22
2065
410
250
16
23
17
20
0.7
Min
20
1
5
10
1.0
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
ΚΩ
nC
nC
nC
µs
µs
µs
µs
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=11A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t
≤
10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2011
www.aosmd.com
Page 2 of 6
AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
4.5V
40
2.5V
3.5V
60
2V
40
30
V
DS
=5V
I
S
(A)
I
D
(A)
20
125°C
20
V
GS
=1.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
18
R
DS(ON)
(mΩ)
Ω
16
14
12
10
0
10
15
20
I
s
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
V
GS
=2.5V
V
GS
=3.5V
Normalized On-Resistance
10
25°C
0
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=4.5V
I
D
=11A
V
GS
=2.5V
I
D
=9A
V
GS
=3.5V
I
D
=10A
V
GS
=4.5V
35
I
D
=11A
30
R
DS(ON)
(mΩ)
Ω
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
40
125°C
25
125°C
20
1.0E-01
1.0E-02
1.0E-03
25°C
15
25°C
10
0
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: August 2011
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Page 3 of 6
AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=10V
I
D
=11A
4
Capacitance (pF)
1600
C
iss
2000
V
GS
(Volts)
3
1200
2
800
C
oss
400
C
rss
0
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
1
0
0
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
25
0
100.0
10µs
10.0
I
S
(Amps)
200
160
Power (W)
120
80
40
0
T
J(Max)
=150°C
T
C
=25°C
R
DS(ON)
limited
10µs
100µs
1ms
10ms
1.0
DC
T
J(Max)
=150°C
T
C
=25°C
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
P
D
T
on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2011
www.aosmd.com
Page 4 of 6
AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
Power Dissipation (W)
25
20
15
10
5
0
0
75
100
125
T
CASE
(°C)
°
Figure 12: Power De-rating (Note F)
25
50
150
Current rating I
S
(A)
40
35
30
25
20
15
10
5
0
0
50
75
100
125
T
CASE
(°C)
°
Figure 13: Current De-rating (Note F)
25
150
10000
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
0.001
1000
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
P
D
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2011
www.aosmd.com
Page 5 of 6
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