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PSMN2R0-30YL_11

Description
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
File Size225KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN2R0-30YL_11 Overview

N-channel 30 V 2 mΩ logic level MOSFET in LFPAK

LF
PA
K
PSMN2R0-30YL
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Rev. 4 — 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
Typ
-
-
-
-
Max Unit
30
100
97
175
V
A
W
°C
Static characteristics
R
DSon
-
1.55 2
mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 4.5 V; I
D
= 10 A;
V
DS
= 12 V; see
Figure 14;
see
Figure 15
-
7.5
-
nC
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