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PSMN3R9-60PS

Description
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
File Size247KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN3R9-60PS Overview

N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78

PSMN3R9-60PS
1 February 2013
TO
-2
20A
B
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product
design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Standard level gate
3. Applications
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 48 V; V
GS
= 10 V;
Fig. 13; Fig. 14
-
-
103
33
-
-
nC
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
60
130
263
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
2.94
3.9
Dynamic characteristics
Q
G(tot)
Q
GD
E
DS(AL)S
total gate charge
gate-drain charge
Avalanche ruggedness
non-repetitive drain-
source avalanche
energy
[1]
I
D
= 130 A; V
sup
≤ 60 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 3
-
-
283
mJ
Continuous current is limited by package.
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