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BDS29C

Description
30A, 120V, NPN, Si, POWER TRANSISTOR, TO-254AA, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size30KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric Compare View All

BDS29C Overview

30A, 120V, NPN, Si, POWER TRANSISTOR, TO-254AA, HERMETIC SEALED PACKAGE-3

BDS29C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, R-MSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)30 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
BDS29A
BDS29B
BDS29C
MECHANICAL DATA
Dimensions in mm
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
COMPLEMENTARY
POWER DARLINGTON
TO254 METAL TRANSISTORS
20.07 (0.790)
20.32 (0.800)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
FEATURES
• HERMETIC TO254 METAL PACKAGE
• HIGH RELIABILITY
• ISOLATED OPTION
• MILITARY OPTION
• SCREENING OPTIONS AVAILABLE
1
2
3
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
TO254 METAL PACKAGE
Pin 1
– Base
Pin 2
– Collector
Pin 3
– Emitter
APPLICATIONS
• COMPLEMENTARY GENERAL PURPOSE
AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
R
THj-case
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
£
75°C
Storage Temperature
Junction Temperature
Thermal resistance junction - case
BDS29A
BDS29B
BDS29C
60V
60V
90V
90V
5V
30A
1A
150W
– 65 TO 200°C
200°C
1.16°C/W
120V
120V
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2596
Issue 1

BDS29C Related Products

BDS29C BDS29B
Description 30A, 120V, NPN, Si, POWER TRANSISTOR, TO-254AA, HERMETIC SEALED PACKAGE-3 30A, 90V, NPN, Si, POWER TRANSISTOR, TO-254AA, HERMETIC SEALED PACKAGE-3
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker SEMELAB SEMELAB
Parts packaging code TO-254AA TO-254AA
package instruction FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 30 A 30 A
Collector-emitter maximum voltage 120 V 90 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 200 200
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code R-MSFM-P3 R-MSFM-P3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz
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