To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-16
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM-16
OUTLINE DRAWING
Dimensions
in mm
10.5
MAX
5.2
1.2
2.8
5.0
TYPE
NAME
17
φ3.2 ±
0.2
3.6
8.5
½
VOLTAGE
CLASS
1.3
MAX
13.5
MIN
0.8
2.54
2.54
0.5
2.6
¡I
T (RMS)
........................................................................ 8A
¡V
DRM
....................................................................... 800V
¡I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
¡V
iso
........................................................................ 2000V
¡UL
Recognized: Yellow Card No. E80276(N)
File No. E80271
APPLICATION
Washing machine, other general purpose control applications
➁
➀➁➂
½
Measurement point of
case temperature
➀
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂ ➂
GATE TERMINAL
TO-220F
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
16
800
960
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
4.5
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=88°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
8
80
26
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
½1.
Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-16
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½4
Parameter
Repetitive peak off-state current
On-state voltage
!
Gate trigger
voltage
½2
@
#
!
Gate trigger current
½2
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=12A, Instantaneous measurement
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
3.7
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
0.2
—
10
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
½4.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
V
D
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–4.0A/ms
3. Peak off-state voltage
V
D
=400V
TIME
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
T
j
= 125°C
T
j
= 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-16
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
3
2 V
GM
= 10V
GATE VOLTAGE (V)
P
G(AV)
= 0.5W
P
GM
= 5W
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3
2
10
0
7
5
3
2
I
GM
= 2A
V
GT
= 1.5V
I
RGT I
, I
RGT III
I
FGT I
I
FGT I
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
2
2 3 5 7 10
3
2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
TYPICAL EXAMPLE
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
10
3
NO FINS
16
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-16
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
140
120
100
80
60
AMBIENT TEMPERATURE (°C)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
60
40
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
120 120 t2.3
100 100 t2.3
60 60 t2.3
NATURAL
CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
8
10
12
14
16
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
100 (%)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
DISTRIBUTION
–
T
2
, G
–
+
T
2
, G
–
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
LACHING CURRENT (mA)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
+
T
2
, G
+
10
0
–40 –20 0
20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Mar. 2002
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