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HB56R872ES-7B

Description
Fast Page DRAM Module, 8MX72, 70ns, CMOS, DIMM-168
Categorystorage    storage   
File Size203KB,26 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HB56R872ES-7B Overview

Fast Page DRAM Module, 8MX72, 70ns, CMOS, DIMM-168

HB56R872ES-7B Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS REFRESH
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density603979776 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height25.4 mm
Maximum standby current0.1 A
Maximum slew rate1.414 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
HB56R872ES Series
8,388,608-Word x 72-Bit(ECC) High Density Dynamic RAM
Module
Rev. 0
Aug. 17, 1995
The HB56R872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
developed as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56R872ES is a 8M x 72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM
(HM5116400) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver (74ABT16244DGG)
sealed in TSSOP package.
An outline of the HB56R872ES is 168-pin socket type package (dual read out).
Therefore, the HB56R872ES makes high density mounting possible without surface mount technology.
The HB56R872ES provides common data inputs and outputs.
Decoupling capacitors are mounted beside each TSOP on the its module board.
Features
168-pin socket type package (Dual read out)
Lead pitch : 1.27 mm
Single 5 V (±5%) supply
High speed
Access time : tRAC = 60 / 70 /80 ns (max.)
Access time : tCAC = 20 / 23 /25 (max.)
Low power dissipation
Active mode: 8.37 / 7.42 / 6.95 W (max.)
Standby mode: 714 mW (max.)
Buffered input except /RAS and DQ
4 byte interleave enabled, dual address input (A0/B0)
Fast page mode capability
4,096 refresh cycle/64 ms
2 variations of refresh
/RAS - only refresh
/CAS - before - /RAS refresh
TTL compatible

HB56R872ES-7B Related Products

HB56R872ES-7B HB56R872ES-8B HB56R872ES-6B
Description Fast Page DRAM Module, 8MX72, 70ns, CMOS, DIMM-168 Fast Page DRAM Module, 8MX72, 80ns, CMOS, DIMM-168 Fast Page DRAM Module, 8MX72, 60ns, CMOS, DIMM-168
Maker Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
Parts packaging code DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE
Maximum access time 70 ns 80 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS REFRESH RAS ONLY/CAS BEFORE RAS REFRESH RAS ONLY/CAS BEFORE RAS REFRESH
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 603979776 bit 603979776 bit 603979776 bit
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 72 72 72
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 168 168 168
word count 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 8MX72 8MX72 8MX72
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
Maximum seat height 25.4 mm 25.4 mm 25.4 mm
Maximum standby current 0.1 A 0.1 A 0.1 A
Maximum slew rate 1.414 mA 1.324 mA 1.594 mA
Maximum supply voltage (Vsup) 5.25 V 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
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