HB56SW872ES-8B datasheet, PDF - EEWORLD Datasheet

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HB56SW872ES-8B: DescriptionEDO DRAM Module, 8MX72, 80ns, CMOS, SOCKET TYPE PACKAGE-168; Categorystorage storage; File Size425KB，13 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56SW872ES-8B Overview

EDO DRAM Module, 8MX72, 80ns, CMOS, SOCKET TYPE PACKAGE-168

HB56SW872ES-8B Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	80 ns
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	603979776 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.4 mm
Maximum standby current	0.1 A
Maximum slew rate	1.594 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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HB56SW872ES-8B Related Products

	HB56SW872ES-8B	HB56SW872ES-6B	HB56SW872ES-7B
Description	EDO DRAM Module, 8MX72, 80ns, CMOS, SOCKET TYPE PACKAGE-168	EDO DRAM Module, 8MX72, 60ns, CMOS, SOCKET TYPE PACKAGE-168	EDO DRAM Module, 8MX72, 70ns, CMOS, SOCKET TYPE PACKAGE-168
Parts packaging code	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	80 ns	60 ns	70 ns
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	603979776 bit	603979776 bit	603979776 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	72	72	72
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	168	168	168
word count	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	8MX72	8MX72	8MX72
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
Maximum seat height	25.4 mm	25.4 mm	25.4 mm
Maximum standby current	0.1 A	0.1 A	0.1 A
Maximum slew rate	1.594 mA	1.954 mA	1.774 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3.15 V	3.15 V	3.15 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	-	1	1

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