BL
SMALL SIGNAL SWITCHING DIODES
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
BAV100---BAV103
VOLTAGE RANGE: 50-200 V
CURRENT:
250 mA
MINI-MELF
Cathode indification
0.1
MECHANICAL DATA
Case: MINI-MELF,glass case
Polarity: Color band denotes cathode
Weight: Approx 0.031 grams
3.4
+0.3
-0.1
0.4
1 .5
0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
,ambient temperature unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE
BAV100
Reverse voltage
Repetitive peak reverse voltage
Forward current
Forward surge current t
p
=1s
Power dissipation
Thermal resistance junction to ambient
Thermal resistance junction to lead
Junction temperature
Storage temperature range
1)
BAV101
100
120
0.25
1.0
500
500
1)
350
175
BAV102
150
200
BAV103
200
250
Unit
V
V
A
A
mW
K/W
K/W
V
R
V
RRM
I
(AV)
I
FSM
P
V
R
R
JA
50
60
JL
T
j
T
STG
- 65 --- + 175
www.gmesemi.com
Device mounted on PC board 50mm×50mm×1.6mm .
Document Number BAV100-103
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS
Parameter
Forward voltage
Reverse current
I
F
=100mA
V
R
=50V,T
J
=25
V
R
=50V,T
J
=100
V
R
=100V,T
J
=25
V
R
=100V,T
J
=100
V
R
=150V,T
J
=25
V
R
=150V,T
J
=100
V
R
=200V,T
J
=25
V
R
=200V,T
J
=100
Breakdown voltage
BAV100
BAV100
BAV101
BAV101
I
R
BAV102
BAV102
BAV103
BAV103
BAV100
BAV101
V
(BR)
BAV102
BAV103
Diode capacitance
Differential forward resistance
Reverse recovery time
V
R
=0,f=1MH
Z
I
F
=10mA
I
F
=I
R
=30mA,i
R
=3mA,R
L
=100
C
D
r
f
t
rr
Test Conditions
Symbol Min
V
F
-
-
-
-
-
-
-
-
-
60
120
200
250
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
5
-
Max
1
100
15
100
15
100
15
100
15
-
-
-
-
-
-
50
Unit
V
nA
A
nA
A
nA
A
nA
A
V
V
V
V
pF
I
R
=100
uA,t
p
/T=0.01,t
p
=0.3ms
ns
www.gmesemi.com
Document Number BAV100-103
BL
GALAXY ELECTRICA
2.
RATINGS AND CHARACTERISTIC CURVES
FIG 1. REVERSE CURRENT VS. JUNCTION TEMPERATURE
BAV100 - - - BAV103
FIG 2. FORWARD CURRENT VS. FORWARD VOLTAGE
REVERSE CURRENT (
μ
A )
1000
1000
Forward Current ( mA )
100
Scattering Limit
10
T
j
= 25°C
100
Scattering Limit
10
1
V
R
= V
RRM
0.1
0.01
0
40
80
120
1
0.1
160
200
0
0.4
0.8
1.2
1.6
2.0
JUNCTION TEMPERTURE (
)
Forward Voltage ( V )
FIG 3. DIFFERENTIAL FORWARD RESISTANCE
VS. FORWARD CURRENT
DIFFERENTIAL FORWARD RESISTANCE,
1000
100
T
j
= 25°C
10
1
0.1
1
10
100
FORWARD CURRENT ( mA )
www.gmesemi.com
Document Number BAV100-103
BL
GALAXY ELECTRICAL
3.
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