Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
| Parameter Name | Attribute value |
| Maker | Fuji Electric Co., Ltd. |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 150 A |
| Collector-emitter maximum voltage | 1200 V |
| Gate-emitter maximum voltage | 6 V |
| Number of components | 2 |
| Maximum power dissipation(Abs) | 1200 W |
| VCEsat-Max | 5 V |