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2MBI150-120

Description
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size67KB,1 Pages
ManufacturerFuji Electric Co., Ltd.
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2MBI150-120 Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES

2MBI150-120 Parametric

Parameter NameAttribute value
MakerFuji Electric Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
Gate-emitter maximum voltage6 V
Number of components2
Maximum power dissipation(Abs)1200 W
VCEsat-Max5 V
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