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BC557C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size72KB,1 Pages
ManufacturerDiodes Incorporated
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BC557C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC557C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.65 V
This Material Copyrighted By Its Respective Manufacturer

BC557C Related Products

BC557C 2N3905 2N4400
Description Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Transistor Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction CYLINDRICAL, O-PBCY-W3 , IN-LINE, R-PSIP-W3
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.2 A 0.6 A
Configuration SINGLE Single SINGLE
Minimum DC current gain (hFE) 420 50 50
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP NPN
Maximum power dissipation(Abs) 0.625 W 0.35 W 0.35 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 150 MHz 200 MHz 200 MHz
Collector-emitter maximum voltage 45 V - 40 V
JESD-30 code O-PBCY-W3 - R-PSIP-W3
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - RECTANGULAR
Package form CYLINDRICAL - IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 235
Certification status Not Qualified - Not Qualified
Terminal form WIRE - WIRE
Terminal location BOTTOM - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - 10
Transistor component materials SILICON - SILICON
Base Number Matches - 1 1
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