DCR590G65
Phase Control Thyristor
DS5870-1.4 June 2008 (LN26249)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
6500V
595A
6600A
1500V/µs
200A/us
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
6500
6000
5500
Conditions
*
Higher dV/dt selections available
DCR590G65*
DCR590G60
DCR590G55
T
vj
= -40° C to 125° C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: G
(See Package Details for further information)
Lower voltage grades available.
0
0
*6200V @ -40 C, 6500V @ 0 C
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR590G65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR590G65
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60° C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
595
935
912
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125° C
V
R
= 0
Max.
6.6
0.22
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 11.5kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
10
Max.
0.0268
0.0527
0.0652
0.0072
0.0144
135
125
125
13
Units
° C/W
° C/W
° C/W
° C/W
° C/W
°C
°C
°C
kN
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DCR590G65
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125° C
To 67% V
DRM
, T
j
= 125° C, gate open
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10 ,
t
r
< 0.5µs, T
j
= 125° C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
100
1500
100
200
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
50A to 400A at T
case
= 125° C
400A to 1600A at T
case
= 125° C
50A to 400A at T
case
= 125° C
400A to 1600A at T
case
= 125° C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25° C
-
-
-
-
-
0.912
1.108
2.157
1.647
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
I
T
= 500A , T
j
= 125° C, V
R
= 100V,
dI/dt = 5A/µs,
dV
DR
/dt = 20V/µs linear
550
1100
µs
Q
S
I
RR
I
L
I
H
Stored charge
Reverse recovery current
Latching current
Holding current
I
T
= 500A, T
j
= 125° C, dI/dt = 5A/µs,
I
T
= 500A, T
j
= 125° C, dI/dt = 5A/µs,
T
j
= 25° C, V
D
= 5V
T
j
= 25° C, R
G-K
= , I
TM
= 500A, I
T
= 5A
1800
77
-
-
2600
90
3
300
µC
A
A
mA
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DCR590G65
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25° C
At 50% V
DRM,
T
case
= 125° C
V
DRM
= 5V, T
case
= 25° C
At 50% V
DRM,
T
case
= 125° C
Max.
1.5
0.4
250
15
Units
V
V
mA
mA
CURVES
1600
Instantaneous on-state current, I
T
- (A)
1200
800
400
25° min
C
25° max
C
125° min
C
125° max
C
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D. I
T
Where
A = 0.542452
B = 0.065613
C = 0.001318
D = 0.015356
these values are valid for T
j
= 125° C for I
T
50A to 1600A
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DCR590G65
SEMICONDUCTOR
16
15
14
130
120
Maximum case temperature, T
case
(
o
C )
110
100
90
80
70
60
50
40
30
20
10
0
0
500
1000
1500
2000
0
100 200 300 400 500 600 700 800 900
180
120
90
60
30
Mean power dissipation - (kW)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
180
120
90
60
30
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
130
Maximum heatsink temperature, T
Heatsink
- (
o
C )
120
110
100
90
80
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
180
120
90
60
30
12
11
Mean power dissipation - (kW)
10
9
8
7
6
5
4
3
2
1
0
0
500
1000
1500
2000
2500
d.c.
180
120
90
60
30
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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