DCR820N65
Phase Control Thyristor
Preliminary Information
DS5923-1.3 June 2008 (LN 26210)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
6500V
820A
12000A
1500V/µs
200A/µs
APPLICATIONS
Medium Voltage Soft Starts
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
6500
6000
5500
5000
Conditions
*
Higher dV/dt selections available
DCR820N65*
DCR820N60
DCR820N55
DCR820N50
T
vj
= -40° to 125°
C
C,
I
DRM
= I
RRM
= 200mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: N
(See Package Details for further information)
Fig. 1 Package outline
Lower voltage grades available.
0
0
6200V @ -40 C, 6500V @ 0 C
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR820N65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
1/11
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DCR820N65
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60° unless stated otherwise
C
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
820
1288
1090
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°
C
V
R
= 0
Max.
12.0
0.72
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 23 kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
20.0
Max.
0.0221
0.041
0.0516
0.004
0.008
135
125
125
25.0
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C
°
C
°
C
kN
2/11
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DCR820N65
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°
C
To 67% V
DRM
, T
j
= 125° gate open
C,
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10 ,
t
r
< 0.5µs, T
j
= 125°
C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
200
1500
100
200
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
100A to 870A at T
case
= 125°
C
870A to 3000A at T
case
= 125°
C
100A to 870A at T
case
= 125°
C
870A to 3000A at T
case
= 125°
C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°
C
-
-
-
-
-
1.0
1.1847
1.1429
0.9472
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
T
j
= 125°
peak
= 1000A, t
p
= 1000us,
C,I
V
RM
= 100V, dI/dt = -5A/µs,
dV
DR
/dt = 20V/µs linear to 2500V
600
1000
µs
I
RR
Q
S
I
L
I
H
Reverse recovery current
Stored charge
Latching current
Holding current
I
T
= 1000A, t
p
= 1000us,T
j
= 125°
C,
dI/dt = - 5A/µs, V
R
= 100V
T
j
= 25° V
D
= 5V
C,
T
j
= 25° R
G-K
= , I
TM
= 500A, I
T
= 5A
C,
90
2500
-
-
120
4000
3
300
A
µC
A
mA
3/11
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DCR820N65
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°
C
At 50% V
DRM,
T
case
= 125°
C
V
DRM
= 5V, T
case
= 25°
C
At 50% V
DRM,
T
case
= 125°
C
Max.
1.5
0.4
250
15
Units
V
V
mA
mA
CURVES
3500
3000
2500
2000
1500
1000
500
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, V
T
- (V)
5.0
min 25°
C
25° max
C
125° min
C
125° max
C
Instantaneous on-state current, I
T
- (A)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D. I
T
Where
A = 0.739446
B = 0.018199
C = 0.000769
D = 0.017564
these values are valid for T
j
= 125° for I
T
300A to 3000A
C
4/11
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DCR820N65
SEMICONDUCTOR
16
14
125
Maximum case temperature, T
case
( C )
Mean power dissipation - (kW)
100
12
10
8
6
4
2
0
0
500
1000
1500
2000
2500
180
120
90
60
30
180
120
90
60
30
o
75
50
25
0
0
500
1000
1500
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
Maximum heatsink temperature, T
Heatsink
- ( ° C)
125
180
120
90
60
30
16
14
Mean power dissipation - (kW)
100
12
10
8
6
4
2
75
50
25
d.c.
180
120
90
60
30
0
0
500
1000
1500
0
0
1000
2000
3000
4000
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
5/11
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