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EDJ2116DEBG-JS-F

Description
128M X 16 DDR DRAM, 20 ns, PBGA96
Categorystorage   
File Size399KB,33 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric Compare View All

EDJ2116DEBG-JS-F Overview

128M X 16 DDR DRAM, 20 ns, PBGA96

EDJ2116DEBG-JS-F Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals96
Maximum supply/operating voltage1.58 V
Minimum supply/operating voltage1.42 V
Rated supply voltage1.5 V
Minimum access time20 ns
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, FBGA-96
stateACTIVE
packaging shapeRectangle
Package SizeGRID ARRAY, THIN PROFILE, FINE PITCH
surface mountYes
Terminal formBALL
Terminal spacing0.8000 mm
terminal coatingtin silver copper
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
memory width16
organize128M × 16
storage density2.15E9 deg
operating modeSynchronize
Number of digits1.34E8 words
Number of digits128M
Access methodMultiple BANK PAGE BURST
Memory IC typedouble rate synchronous dynamic random access memory dynamic random access memory
Number of ports1
COVER
DATA SHEET
2G bits DDR3 SDRAM
EDJ2108DEBG (256M words
×
8 bits)
EDJ2116DEBG (128M words
×
16 bits)
Specifications
• Density: 2G bits
• Organization
— 32M words
×
8 bits
×
8 banks (EDJ2108DEBG)
— 16M words
×
16 bits
×
8 banks (EDJ2116DEBG)
• Package
— 78-ball FBGA (EDJ2108DEBG)
— 96-ball FBGA (EDJ2116DEBG)
— Lead-free (RoHS compliant) and Halogen-free
• Power supply: VDD, VDDQ = 1.5V
±
0.075V
• Data rate
— 2133Mbps/1866Mbps/1600Mbps/1333Mbps (max)
• 1KB page size (EDJ2108DEBG)
— Row address: A0 to A14
— Column address: A0 to A9
• 2KB page size (EDJ2116DEBG)
— Row address: A0 to A13
— Column address: A0 to A9
• Eight internal banks for concurrent operation
• Interface: SSTL_15
• Burst length (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
— Sequential (8, 4 with BC)
— Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13, 14
• /CAS Write Latency (CWL): 5, 6, 7, 8, 9, 10
• Precharge: auto precharge option for each burst
access
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Refresh cycles
— Average refresh period
7.8µs at 0°C
TC
+85°C
3.9µs at +85°C < TC
+95°C
• Operating case temperature range
— TC = 0°C to +95°C
Features
• Double-data-rate architecture: two data transfers per
clock cycle
• The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
— Synchronous ODT
— Dynamic ODT
— Asynchronous ODT
• Multi Purpose Register (MPR) for pre-defined pattern
read out
• ZQ calibration for DQ drive and ODT
• /RESET pin for Power-up sequence and reset function
• SRT range:
— Normal/extended
• Programmable Output driver impedance control
• Seamless BL4 access with bank-grouping
— Applied only for DDR3-1333 and 1600
Document. No. E1712E50 (Ver. 5.0)
Date Published July 2012 (K) Japan
Printed in Japan
URL: http://www.elpida.com
©
Elpida Memory, Inc. 2010-2012

EDJ2116DEBG-JS-F Related Products

EDJ2116DEBG-JS-F EDJ2108DEBG EDJ2108DEBG-GN-F EDJ2108DEBG-JS-F EDJ2108DEBG-MU-F EDJ2116DEBG-DJ-F EDJ2116DEBG-GN-F
Description 128M X 16 DDR DRAM, 20 ns, PBGA96 128M X 16 DDR DRAM, 20 ns, PBGA96 128M X 16 DDR DRAM, 20 ns, PBGA96 128M X 16 DDR DRAM, 20 ns, PBGA96 128M X 16 DDR DRAM, 20 ns, PBGA96 128M X 16 DDR DRAM, 20 ns, PBGA96 128M X 16 DDR DRAM, 20 ns, PBGA96
Number of functions 1 1 1 1 1 1 1
Number of terminals 96 96 78 96 96 96 96
surface mount Yes Yes YES Yes Yes YES YES
Terminal form BALL BALL BALL BALL BALL BALL BALL
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
memory width 16 16 8 16 16 16 16
organize 128M × 16 128M × 16 256MX8 128M × 16 128M × 16 128MX16 128MX16
Number of ports 1 1 1 1 1 1 1
Maximum supply/operating voltage 1.58 V 1.58 V - 1.58 V 1.58 V - -
Minimum supply/operating voltage 1.42 V 1.42 V - 1.42 V 1.42 V - -
Rated supply voltage 1.5 V 1.5 V - 1.5 V 1.5 V - -
Minimum access time 20 ns 20 ns - 20 ns 20 ns - -
Processing package description HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 - HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 - -
state ACTIVE ACTIVE - ACTIVE ACTIVE - -
packaging shape Rectangle Rectangle - Rectangle Rectangle - -
Package Size GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - -
Terminal spacing 0.8000 mm 0.8000 mm - 0.8000 mm 0.8000 mm - -
terminal coating tin silver copper tin silver copper - tin silver copper tin silver copper - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy - -
storage density 2.15E9 deg 2.15E9 deg - 2.15E9 deg 2.15E9 deg - -
operating mode Synchronize Synchronize - Synchronize Synchronize - -
Number of digits 128M 128M - 128M 128M - -
Access method Multiple BANK PAGE BURST Multiple BANK PAGE BURST - Multiple BANK PAGE BURST Multiple BANK PAGE BURST - -
Memory IC type double rate synchronous dynamic random access memory dynamic random access memory double rate synchronous dynamic random access memory dynamic random access memory - double rate synchronous dynamic random access memory dynamic random access memory double rate synchronous dynamic random access memory dynamic random access memory - -
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