ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
APPEARANCE
WWW .
Microsemi
.C
OM
The ICTE-5 through ICTE-45C series of Transient Voltage
Suppressors (TVSs) are designed for the protection of integrated
circuits that require very low Clamping Voltages (V
C
) during a
transient threat. Due to their very fast response time, protection
level and high Peak Pulse Power (P
PP
) capability, they are extremely
effective in providing protection against line transients generated by:
voltage reversals, capacitive or inductive load switching,
electromechanical switching, electrostatic discharge and
electromagnetic coupling.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
•
•
APPLICATIONS / BENEFITS
•
These transient voltage suppressors are
designed for the protection of integrated
circuits. Characterized by a very low
clamping voltage together with a low standoff
voltage, they afford a high degree of
protection to: TTL, ECL, DTL, MOS, CMOS,
VMOS, HMOS, NMOS and static memory
circuits.
This series of TVS devices is designed to protect
Bipolar, MOS and Schottky improved integrated
circuits.
Transient protection for CMOS, MOS, Bipolar,
ICS (TTL, ECL, DTL, RTL and linear functions)
5.0 to 45 volts
Low clamping ratio
RoHS Compliant devices available by adding “e3”
suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
•
•
CASE: Void-free, transfer molded
thermosetting epoxy body meeting UL94V-0
FINISH: Tin-lead or RoHS Compliant matte-
Tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode connected to case and
marked. Bidirectional not marked.
WEIGHT: 1.5 grams (approx.)
MOUNTING POSITION: Any
See package dimension on last page
•
•
•
•
•
•
•
•
1500 Watts of Peak Pulse Power (P
PP
)
dissipation at 25
o
C and 10x1000μs
t
clamping
(0 volts to V
(BR)
min):
<100 ps theoretical for unidirectional and <5 ns
for bidirectional
Operating and Storage temperatures: -65
o
C to
+150
o
C.
Forward surge rating: 200 amps, 1/120 second
at 25
o
C. (Applies to Unidirectional or single
direction only).
Steady State power dissipation: 5 watts.
Repetition rate (duty cycle): .05%
Clamping Factor: 1.33 @ Full rated power.
1.20 @ 50% rated power.
Clamping Factor: The ratio of the actual V
C
(Clamping Voltage) to the actual V
(BR)
(Breakdown Votlage) as measured on a
specific device.
ICT-5 thru ICT-45C, e3
Copyright
©
2007
7-09-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C (UNIDIRECTIONAL)
MAXIMUM
MINIMUM*
REVERSE
BREAKDOWN
STAND-OFF
LEAKAGE
VOLTAGE
VOLTAGE
@V
WM
(NOTE 1)
@ 1.0 mA
I
D
V
(BR)
V
WM
MICROSEMI
VOLTS
PART NUMBER
μA
VOLTS
6.0
300
5.0
ICTE-5
9.4
25
8.0
ICTE-8
11.7
2
10.0
ICTE-10
14.1
2
12.0
ICTE-12
17.6
2
15.0
ICTE-15
21.2
2
18.0
ICTE-18
25.9
2
22.0
ICTE-22
42.4
2
36.0
ICTE-36
52.9
2
45.0
ICTE-45
V
F
at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
I
PP1
= 1A
V
C
VOLTS
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ I
PP2
= 10A
V
C
VOLTS
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
@ 10 x 1000μs
I
PP3
A
160
100
90
70
60
50
40
23
19
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25
o
C (Test Both Polarities for BIDIRECTIONAL)
5.0
ICTE-5C
8.0
ICTE-8C
10.0
ICTE-10C
12.0
ICTE-12C
15.0
ICTE-15C
18.0
ICTE-18C
22.0
ICTE-22C
36.0
ICTE-36C
45.0
ICTE-45C
C Suffix indicates Bidirectional
300
25
2
2
2
2
2
2
2
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.1
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
7.5
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
160
100
90
70
60
50
40
23
19
NOTE 1: TVSs are normally selected according to the reverse “Stand Off Voltage” (V
WM
) which should be equal to or greater than the dc or continuous
peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
OUTLINE AND CIRCUIT
ICTE-5 thru ICTE-45C, e3
FIGURE 1
Peak Pulse Power vs.
Pulse Time (T
W
) in
μs
Copyright
©
2007
7-09-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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