星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MBR120 THRU MBR1100
SOD-123FL
1.65 0.15
Cathode
Band
Top View
2.7
1.05 0.15
0.2
0.7
0.25
MECHANICAL DATA
Case:
JEDEC SOD-123FL molded plastic body
Terminals:
Solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MBRS
SYMBOLS
120-FL
MBRS
130-FL
MBRS
140-FL
MBRS
150-FL
MBRS
160-FL
MBRS
170-FL
MBRS
180-FL
MBRS
190-FL
MBRS
1100-FL
UNITS
VOLTS
VOLTS
VOLTS
Amp
Amps
Marking
D12
D13
D14
D15
D16
D17
D18
D19
D110
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
T
J
T
STG
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
70
49
70
80
56
80
90
63
90
100
70
100
1.0
25.0
0.55
10.0
110
-65 to +125
-65 to +150
0.70
0.5
5.0
80
-65 to +150
0.85
Volts
mA
pF
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
1
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
0.2
0.9
0.2
星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1
MBR120 THRU MBR1100
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.8
25
0.6
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
20
15
0.4
10
0.2
MBRS120-MBRS160
MBRS170-MBRS1100
5.0
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100 C
1
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
1
TJ=75 C
0.1
MBRS120-MBRS140
MBRS150-MBRS160
MBRS170-MBRS1100
0.1
0.01
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0
1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
2000
1000
MBRS120-MBRS140
MBRS120-MBRS1100
100
T
J
=25 C
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
2
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７
Microcontroller MCU
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