AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
General Description
The AOD3N50 & AOU3N50 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
600V@150℃
2.8A
< 3Ω
100% UIS Tested!
100% R
g
Tested!
TO252
DPAK
Top View
Bottom View
D
D
Top View
TO251
D
Bottom View
S
S
G
G
D
S
S
D
G
G
S
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximum
500
±30
2.8
1.8
9
2
60
120
5
57
0.45
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
Power Dissipation
B
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
1.8
Maximum
55
0.5
2.2
Units
°C/W
°C/W
°C/W
Rev 6: Aug 2011
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Page 1 of 6
AOD3N50/AOU3N50
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
221
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
25
2.1
1.9
276
31.4
2.6
3.9
6.7
V
GS
=10V, V
DS
=400V, I
D
=3A
1.7
2.7
11
V
GS
=10V, V
DS
=250V, I
D
=3A,
R
G
=25Ω
I
F
=3A,dI/dt=100A/µs,V
DS
=100V
19
20.5
15
134
0.89
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
ID=250µA, VGS=0V
V
DS
=500V, V
GS
=0V
V
DS
=400V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V,I
D
=250µA
V
GS
=10V, I
D
=1.5A
V
DS
=40V, I
D
=1.5A
I
S
=1A,V
GS
=0V
3.5
4.1
2.3
2.8
0.78
1
3
9
331
38
4.1
5.9
8.0
3.0
3.2
13.2
23.0
24.6
18.0
161
1.1
500
600
0.54
1
10
±100
4.5
3
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=3A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=2A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Aug 2011
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Page 2 of 6
AOD3N50/AOU3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
10V
5
4
I
D
(A)
3
6V
2
1
V
GS
=5.5V
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
5.0
Normalized On-Resistance
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
7
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
0.1
2
4
6
8
10
25°C
6.5V
I
D
(A)
125°C
10
V
DS
=40V
-55°C
1
V
GS
(Volts)
Figure 2: Transfer Characteristics
4.0
R
DS(ON)
(Ω)
Ω
V
GS
=10V
V
GS
=10V
I
D
=1.5A
3.0
2.0
1.0
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
I
D
=30A
1.0E+01
BV
DSS
(Normalized)
1.1
1.0E+02
40
1.0E+00
I
S
(A)
125°C
25°C
1
125°
1.0E-01
1.0E-02
0.9
25°
1.0E-03
1.0E-04
-100
50
100
150
200
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
-50
0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.8
Rev 6: Aug 2011
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Page 3 of 6
AOD3N50/AOU3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=3A
Capacitance (pF)
100
1000
C
iss
12
V
GS
(Volts)
9
C
oss
6
10
C
rss
3
0
0
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
10
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
10
800
10µs
R
DS(ON)
limited
1
100µs
1ms
10ms
0.1s
Power (W)
600
I
D
(Amps)
T
J(Max)
=150°C
T
A
=25°C
400
0.1
DC
T
J(Max)
=150°C
T
C
=25°C
200
0.01
1
10
100
1000
0
0.0001
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.2°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
P
D
T
on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Aug 2011
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Page 4 of 6
AOD3N50/AOU3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
0
75
100
125
T
CASE
(°C)
Figure 12: Power De-rating (Note B)
25
50
150
Current rating I
D
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
75
100
125
T
CASE
(°C)
Figure 13: Current De-rating (Note B)
25
50
150
Power Dissipation (W)
400
T
J(Max)
=150°C
T
A
=25°C
300
Power (W)
200
100
0
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Case (Note G)
0.01
100
1000
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJC
.R
θJC
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
100
1000
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 6: Aug 2011
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Page 5 of 6
Embedded System
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