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AOD6N50

Description
500V,5.3A N-Channel MOSFET
File Size487KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet View All

AOD6N50 Overview

500V,5.3A N-Channel MOSFET

AOD6N50
500V,5.3A N-Channel MOSFET
General Description
The AOD6N50 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
600V@150℃
5.3A
< 1.4Ω
100% UIS Tested!
100% R
g
Tested!
TO252
DPAK
Top View
Bottom View
D
D
D
S
S
G
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximum
500
±30
5.3
3.3
17
2.8
118
235
5
104
0.83
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Repetitive avalanche energy
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
Power Dissipation
B
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
Symbol
R
θJA
R
θCS
R
θJC
Typical
43
-
1
Maximum
55
0.5
1.2
Units
°
C/W
°
C/W
°
C/W
Rev0: April 2012
Page 1 of 6
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