Freescale Semiconductor
Technical Data
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Device has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
•
Typical Narrowband Performance: V
DD
= 50 Volts, I
DQ
= 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @
±4
MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type
DVB--T (8k OFDM)
P
out
(W)
125 Avg.
f
(MHz)
860
G
ps
(dB)
19.3
η
D
(%)
30.0
ACPR
(dBc)
--60.5
IRL
(dB)
--12
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
470-
-860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
•
Typical Pulsed Broadband Performance: V
DD
= 50 Volts, I
DQ
= 1400 mA,
Pulsed Width = 100
μsec,
Duty Cycle = 10%
Signal Type
Pulsed
P
out
(W)
600 Peak
f
(MHz)
470
650
860
G
ps
(dB)
19.3
20.0
18.8
η
D
(%)
47.1
53.1
48.9
CASE 375D-
-05, STYLE 1
NI-
-1230
MRFE6VP8600HR6
Features
•
Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated P
out
)
•
Exceptional Efficiency for Class AB Analog or Digital Television Operation
•
Full Performance across Complete UHF TV Spectrum, 470--860 MHz
•
Capable of 600 Watt CW Output Power with Adequate Thermal Management
•
Integrated Input Matching
•
Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V
−
Improves Class C Performance, e.g. in a Doherty Peaking Stage
−
Enables Fast, Easy and Complete Shutdown of the Amplifier
•
Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
•
Excellent Thermal Characteristics
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
P
D
T
J
Value
--0.5, +130
--6.0, +10
--65 to +150
150
1052
5.26
225
Unit
Vdc
Vdc
°C
°C
W
W/°C
°C
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRFE6VP8600HSR6
PARTS ARE PUSH-
-PULL
Gate 1 3
1 Drain 1
Gate 2 4
2 Drain 2
Figure 1. Pin Connections
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRFE6VP8600HR6
MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz
Symbol
R
θJC
Value
(1,2)
0.19
(3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (2001--4000 V)
B (201--400 V)
IV (>1000 V)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 980
μAdc)
Gate Quiescent Voltage
(5)
(V
DD
= 50 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 20 Adc)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(6)
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(6)
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(7)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.49
79.9
264
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.5
2.1
—
—
2.07
2.65
0.24
15.6
2.5
3.1
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
130
—
—
—
140
—
—
1
—
5
20
μAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(5)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1400 mA, P
out
= 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @
±4
MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
18.0
29.0
—
—
19.3
30.0
--60.5
--12
21.0
—
--58.5
--9
dB
%
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact
resistance of this TIM.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching.
(continued)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical DVB- (8k OFDM) Performance
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 1400 mA, f = 860 MHz,
-T
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
P
out
= 125 W Avg.
Load Mismatch
VSWR >65:1 at all Phase Angles, 3 dB Overdrive from
Rated P
out
(240 W Avg.)
PAR
Ψ
—
7.8
—
dB
No Degradation in Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
3
R1
C1
C2
L1
C12
C13
C11
COAX1
COAX3
C19
C23*
C5
C3 C4
C6
L2
C8*
CUT OUT AREA
C7
C14* C16*
C15*
C18*
C17*
C21 C20
C22
C24
COAX4
COAX2
MRFE6VP8600H
Rev. 1
C9
C10
L3
R2
C25
C26
*C8, C14, C15, C16, C17, C18 and C23 are mounted vertically.
Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB- (8k OFDM)
-T
Table 5. MRFE6VP8600HR6(HSR6) Test Circuit Component Designations and Values — 860 MHz, DVB- (8k OFDM)
-T
Part
C1, C9
C2, C10
C3, C4, C20, C21, C23
C5, C6
C7
C8
C11, C24
C12, C25
C13, C26
C14
C15
C16
C17
C18
C19, C22
Coax1, 2, 3, 4
L1, L3
L2
R1, R2
PCB
Description
10
μF,
50 V, Chip Capacitors
2.2
μF,
50 V, Chip Capacitors
100 pF Chip Capacitors
24 pF Chip Capacitors
0.8--8.0 pF Variable Capacitor
12 pF Chip Capacitor
2.2
μF,
100 V, Chip Capacitors
4.7
μF,
100 V, Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
6.8 pF Chip Capacitor
3.0 pF Chip Capacitor
2.7 pF Chip Capacitor
3.9 pF Chip Capacitor
5.1 pF Chip Capacitor
1000 pF Chip Capacitors
25
Ω
SemiRigid Coax, Length 2.0”
5.0 nH, 2 Turn Inductors
2.5 nH, 1 Turn Inductor
10
Ω,
1/4 W Chip Resistors
0.030″,
ε
r
= 3.5
Part Number
GRM55DR61H106KA88L
C3225X7R1H225K
ATC100B101JT500XT
ATC100B240JT500XT
27291SL
ATC100B120JT500XT
C3225X7R2A225KT
GRM55ER72A475KA01B
MCGPR63V477M13X26--RH
ATC100B6R8CT500XT
ATC100B3R0CT500XT
ATC100B2R7BT500XT
ATC100B3R9CT500XT
ATC100B5R1CT500XT
ATC100B102JT50XT
UT--141C--25
A02TKLC
A01TKLC
CRCW120610R0JNEA
RO4350B
Manufacturer
Murata
TDK
ATC
ATC
Johanson Components
ATC
TDK
Murata
Multicomp
ATC
ATC
ATC
ATC
ATC
ATC
Micro--Coax
Coilcraft
Coilcraft
Vishay
Rogers
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
4
RF Device Data
Freescale Semiconductor
COAX1
V
BIAS
C1
C2
L1
Z19
R1
Z17
RF
INPUT Z1
Z3
Z2
C3
Z5
C5
Z7
Z9
Z11 Z13
Z15
L2
C4
Z4
Z6
C6
Z8
C7
Z10
C8
Z12 Z14
Z16
Z18
R2
COAX2
V
BIAS
C9
C10
L3
Z20
Z46
C11
Z44
Z21
Z23 Z25
Z27
+
C12
C13
V
SUPPLY
COAX3
Z29
Z31
Z33
Z35 Z37
C19
Z39
C20
DUT
C14
C15
C16
C17
C18
C21
Z22
Z24 Z26
Z45
C24
Z47
+
C25
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
0.204″ x 0.062″ Microstrip
0.245″ x 0.080″ Microstrip
0.445″ x 0.060″ Microstrip
0.019″ x 0.100″ Microstrip
0.415″ x 0.400″ Microstrip
0.083″ x 0.400″ Microstrip
0.022″ x 0.400″ Microstrip
0.208″ x 0.850″ Microstrip
0.242″ x 0.960″ Microstrip
Z17, Z18
Z19*, Z20*
Z21, Z22
Z23, Z24
Z25, Z26
Z27, Z28
Z29, Z30
Z31, Z32
Z33, Z34
C26
Z35, Z36
Z37, Z38
Z39, Z40
Z41
Z42
Z43
Z44*, Z45*
Z46, Z47
V
SUPPLY
Z28
Z30
Z32
Z34
Z36 Z38
Z40
C22
COAX4
Z41
C23
RF
Z42 Z43 OUTPUT
0.780″ x 0.080″ Microstrip
0.354″ x 0.080″ Microstrip
0.164″ x 0.520″ Microstrip
0.186″ x 0.520″ Microstrip
0.088″ x 0.420″ Microstrip
0.072″ x 0.420″ Microstrip
0.072″ x 0.420″ Microstrip
0.259″ x 0.420″ Microstrip
0.075″ x 0.420″ Microstrip
0.052″ x 0.420″ Microstrip
0.211″ x 0.100″ Microstrip
0.389″ x 0.060″ Microstrip
0.070″ x 0.080″ Microstrip
0.018″ x 0.080″ Microstrip
0.204″ x 0.062″ Microstrip
0.850″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
* Line length includes microstrip bends
Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB- (8k OFDM)
-T
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
EEWORLD
