AO7801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7801 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM.
Features
V
DS
(V) = -20V
I
D
= -0.6A (V
GS
= -4.5V)
R
DS(ON)
< 520mΩ (V
GS
= -4.5V)
R
DS(ON)
< 700mΩ (V
GS
= -2.5V)
R
DS(ON)
< 950mΩ (V
GS
= -1.8V)
SC-70-6
(SOT-323)
Top View
G1
D1
D2
S1
G1
D2
1 6
2 5
3 4
D1
G2
S2
G2
S1
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-0.6
-0.48
-3
0.3
0.19
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
360
400
300
Max
415
460
350
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
AO7801
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-0.6A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
=-2.5V, I
D
=-0.5A
V
GS
=-1.8V, I
D
=-0.4A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-0.6A
I
S
=-0.5A,V
GS
=0V
-0.5
-3
400
542
540
700
1.7
-0.86
-1
-0.4
114
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
17
14
12
1.44
V
GS
=-4.5V, V
DS
=-10V, I
D
=-0.6A
0.14
0.35
6.5
V
GS
=-4.5V, V
DS
=-10V,
R
L
=16.7Ω, R
GEN
=3Ω
I
F
=-0.6A, dI/dt=100A/µs
6.5
18.2
5.5
10
3
13
17
1.8
140
520
700
700
950
-0.6
Min
-20
-1
-5
±10
-0.9
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-0.6A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev2: May 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
-10V
-6V
-4.5V
-4V
4
-I
D
(A)
-3V
2
-2.5V
V
GS
=-2.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
900
800
R
DS(ON)
(mΩ)
Ω
700
V
GS
=-2.5V
600
500
400
300
0
1
2
3
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-4.5V
Normalized On-Resistance
V
GS
=-1.8V
1
-3.5V
-I
D
(A)
2
3
125°C
4
25°
V
DS
=-5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.6
V
GS
=-1.8V
I
D
=-0.4A
1.4
V
GS
=-2.5V
I
D
=-0.5A
1.2
V
GS
=-4.5V
I
D
=-0.6A
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
900
800
700
600
500
25°
400
300
0
2
4
6
8
10
125°
-I
S
(A)
I
D
=-0.6A
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.4
0.8
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
R
DS(ON)
(mΩ)
Ω
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO7801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-0.6A
4
Capacitance (pF)
-V
GS
(Volts)
150
200
C
iss
3
100
C
oss
50
C
rss
2
1
0
0.0
0.5
1.0
1.5
2.0
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
10.00
T
J(Max)
=150°C, T
A
=25°C
1.00
-I
D
(Amps)
R
DS(ON)
limited
1ms
10ms
0.1s
0.10
1s
10s
0.01
DC
10µs
100µs
Power (W)
14
12
10
8
6
4
2
T
J(Max)
=150°
C
0.00
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=415°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
100
1000
Alpha & Omega Semiconductor, Ltd.
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