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GB01SLT12-220

Description
Silicon Carbide Power Schottky Diode
File Size381KB,4 Pages
ManufacturerETC
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Silicon Carbide Power Schottky Diode

 
GB01SLT12-220
V
RRM
I
F
Q
C
Package
RoHS Compliant
 
Silicon Carbide Power
Schottky Diode
Features
1200 V Schottky rectifier
175 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of V
F
Extremely fast switching speeds
Superior figure of merit Q
C
/I
F
=
=
=
1200 V
1A
13 nC
PIN 1
CASE
1
2
PIN 2
TO – 220AC
Advantages
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Applications
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Maximum Ratings at T
j
= 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I t value
Power dissipation
Operating and storage temperature
2
Symbol
V
RRM
I
F
I
F(RMS)
I
F,SM
I
F,max
∫i
dt
P
tot
T
j
, T
stg
2
Conditions
T
C
160 °C
T
C
160 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 160 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 160 °C, t
P
= 10 ms
T
C
= 25 °C
Values
1200
1
2
10
8
65
0.5
0.3
42
-55 to 175
Unit
V
A
A
A
A
As
W
°C
2
Electrical Characteristics at T
j
= 175 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 1 A, T
j
= 25 °C
I
F
= 1 A, T
j
= 175 °C
V
R
= 1200 V, T
j
= 25 °C
V
R
= 1200 V, T
j
= 175 °C
V
R
= 400 V
I
F
I
F,MAX
V
R
= 960 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 175 °C
V
R
= 960 V
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.7
2.6
<1
2
7
13
< 17
69
10
8
max.
2.0
3.0
2
20
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
3.6
°C/W
Mechanical Properties
Mounting torque
Dec 2012
M
http://www.genesicsemi.com/index.php/sic-products/schottky
0.6
Nm
Pg1 of
4
 
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