AO4712
30V N-Channel MOSFET
SRFET
General Description
SRFET
TM
AO4712 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R
DS(ON)
,and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
TM
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
13A
< 11mΩ
< 14mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
G
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±12
13
10
68
15
11
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
C
T
A
=25°
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 8: December 2011
www.aosmd.com
Page 1 of 6
AO4712
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=125°
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS，
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=13A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=11A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=13A
I
S
=1A,V
GS
=0V
T
J
=125°
C
1.1
68
9
13
10.7
80
0.4
0.7
5
930
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
90
45
0.7
16
V
GS
=10V, V
DS
=15V, I
D
=13A
7
1170
128
89
1.4
20
8.7
3.2
3
6
V
GS
=10V, V
DS
=15V, R
L
=1.2Ω,
R
GEN
=3Ω
I
F
=13A, dI/dt=500A/µs
5.5
5
2.4
23
4
7
6.5
8.5
8
1400
170
125
2.1
24
10.5
11
16
14
1.65
Min
30
0.5
100
100
2.1
Typ
Max
Units
V
mA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=13A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: December 2011
www.aosmd.com
Page 2 of 6
AO4712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
10V
30
3V
25
I
D
(A)
I
D
(A)
20
2.5V
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
13
12
R
DS(ON)
(mΩ)
Ω
11
10
9
8
7
1
16
21
26
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
6
11
V
GS
=10V
Normalized On-Resistance
V
GS
=2.25V
2.75V
30
25
20
125°C
15
10
25°C
5
0
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
V
DS
=5V
35
2
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
V
GS
=10V
I
D
=13A
17
5
2
V
GS
=4.5V
10
I =11A
D
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
I
D
=13A
20
R
DS(ON)
(mΩ)
Ω
125°C
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
125°C
40
15
1.0E-01
1.0E-02
1.0E-03
10
25°C
5
25°C
1.0E-04
1.0E-05
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 8: December 2011
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Page 3 of 6
AO4712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=13A
Capacitance (pF)
1500
C
iss
1200
8
V
GS
(Volts)
6
900
4
600
C
oss
300
C
rss
2
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
0
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
1000.0
100.0
10000
I
D
(Amps)
Power (W)
10.0
1.0
0.1
0.0
R
DS(ON)
limited
10µs
100µs
1ms
10ms
T
J(Max)
=150°C
T
A
=25°C
10s
DC
1000
100
T
A
=25°C
10
1
0.01
0.1
1
V
DS
(Volts)
10
100
0.00001
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
0.1
1000
Pulse Width (s)
10
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
T
on
0.01
T
Rev 8: December 2011
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Page 4 of 6
AO4712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-01
0.9
0.8
1.E-02
V
DS
=30V
V
SD
(V)
I
R
(A)
1.E-03
V
DS
=15V
1.E-04
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.E-05
100
150
200
Temperature (°
C)
Figure 13: Diode Reverse Leakage Current vs.
Junction Temperature
12
di/dt=800A/µs
125ºC
9
Q
rr
(nC)
25ºC
6
Q
rr
125ºC
3
I
rm
25ºC
0
0
5
10
15
20
25
30
5
4
3
2
1
I
S
(A)
Figure 15: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
10
I
s
=20A
8
4
Q
rr
(nC)
t
rr
(ns)
Q
rr
4
2
I
rm
0
0
200
400
600
800
0
1000
di/dt (A/µs)
µ
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
2
25ºC
3
25ºC
I
rm
(A)
6
25ºC
9
125ºC
6
6
25ºC
t
rr
(ns)
I
rm
(A)
4
t
rr
125ºC
2
S
25ºC
0
0
5
10
15
20
25
30
I
S
(A)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
0.5
0
2
6
8
di/dt=800A/µs
125ºC
0
50
0
0
100
150
200
Temperature (°
C)
Figure 14: Diode Forward voltage vs. Junction
Temperature
50
I
S
=1A
5A
20A
10A
3
2.5
1
12
I
s
=20A
3
2.5
2
25ºC
40
125ºC
6
125ºC
t
rr
1.5
1
S
0.5
0
1000
Rev 8: December 2011
www.aosmd.com
Page 5 of 6
S
S
1.5
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