BX6581PM datasheet, PDF - EEWORLD Datasheet

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BX6581PM: Description20 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1; CategoryWireless rf/communication Radio frequency and microwave; File Size127KB，1 Pages; ManufacturerSpectrum Microwave

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BX6581PM Overview

20 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1

BX6581PM Parametric

Parameter Name	Attribute value
Maker	Spectrum Microwave
Reach Compliance Code	unknown
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COAXIAL
Gain	21 dB
Maximum input power (CW)	10 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	20 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM6581PM

Features

!

Superior Phase Noise Performance

High Gain: >22 dB Typical

Low Noise Figure: <3.5 dB Typical

Operating Temp. - 55 ºC

to +85

ºC

TYPICAL

Ta= 25 ºC

20 - 500 MHz

22

+16

-29

<1.5:1

<3.5

+15

27

MIN/MAX

Ta = -55 ºC to +85 ºC

20 - 500 MHz

21.0 Min.

+13.5 Min.

-28 Max.

2.0:1 Max.

4.5 Max.

+15

30 Max.

Available as:

TM6581PM, 4 Pin TO-8 (T4)

TN6581PM, 4 Pin Surface Mount (SM3)

FP6581PM, 4 Pin Flatpack (FP4)

BX6581PM, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ..... +46 dBm (Typ.)

Second Order Two Tone Intercept Point ......

++40

dBm (Typ.)

Third Order Two Tone Intercept Point ..........

++28

dBm (Typ.)

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. +10 dBm

Short Term RF Input Power ...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

In

Out

Noise figure (dB)

Power

Vdc

mA

Guaranteed Phase Noise Performance

(dBc/Hz)

Frequency

100 Hz

1 kHz

10 kHz

100 kHz

1 MHz

Typical

-162

-165

-166

Guarantee (Min.)

-158

-161

-162

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

2707 Black Lake Place, Philadelphia, PA 19154

TEL 215-464-4000

· · · ·

FAX 215-464-4001

3/31/04

BX6581PM Related Products

	BX6581PM	TN6581PM	TM6581PM	FP6581PM
Description	20 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1	20 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM3, 4 PIN	20 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, T4, TO-8, 4 PIN	20 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, FP-4
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COAXIAL	COMPONENT	COMPONENT	COMPONENT
Gain	21 dB	21 dB	21 dB	21 dB
Maximum input power (CW)	10 dBm	10 dBm	10 dBm	10 dBm
Maximum operating frequency	500 MHz	500 MHz	500 MHz	500 MHz
Minimum operating frequency	20 MHz	20 MHz	20 MHz	20 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2

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