DISCRETE SEMICONDUCTORS
DATA SHEET
BGY116D; BGY116E
UHF amplifier modules
Product specification
Supersedes data of April 1994
File under Discrete Semiconductors, SC09
1996 May 08
Philips Semiconductors
Product specification
UHF amplifier modules
FEATURES
•
12.5 V nominal supply voltage
•
6 W output power
•
Easy control of output power by DC voltage.
APPLICATIONS
•
Mobile Radio equipment operating in the 800 to 870 and
890 to 950 MHz frequency ranges.
DESCRIPTION
The BGY116D and BGY116E are five-stage UHF amplifier
modules in a SOT278B package. Each module consists of
5 NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
PINNING - SOT278B
PIN
1
2
3
4
Flange
BGY116D; BGY116E
DESCRIPTION
RF input
V
C
V
S
RF output
ground
1
Front view
2
3
4
MSA387
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
TYPE NUMBER
BGY116D
BGY116E
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MODE OF
OPERATION
CW
CW
f
(MHz)
800 to 870
890 to 950
V
S
(V)
12.5
12.5
P
L
(W)
6
6
G
p
(dB)
≥37.8
≥37.8
η
(%)
typ. 40
typ. 40
Z
S
; Z
L
(Ω)
50
50
1996 May 08
2
Philips Semiconductors
Product specification
UHF amplifier modules
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
PARAMETER
−
−
−
−
BGY116D; BGY116E
MIN.
8
MAX.
16
10
10
+100
+100
V
V
UNIT
mW
W
°C
°C
−40
−30
handbook, halfpage
P
12
L
(W)
10
MLB618
VSWR = 1:1
VSWR = 3:1
8
6
4
2
0
0
40
80
Tmb (
o
C)
120
Fig.2 Power derating curve.
1996 May 08
3
Philips Semiconductors
Product specification
UHF amplifier modules
BGY116D; BGY116E
MLB619
handbook, halfpage
P
12
L
(W)
handbook, halfpage
60
MLB620
800 MHz
10
η
(%)
800 MHz
40
870 MHz
8
870 MHz
6
4
20
2
0
0
2
4
6
8
10
VC (V)
0
0
4
8
P L (W)
12
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
S
= 12.5 V; T
mb
= 25
°
C.
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
S
= 12.5 V; T
mb
= 25
°
C.
Fig.3
Load power as a function of control voltage;
BGY116D; typical values.
Fig.4
Efficiency as a function of load power;
BGY116D; typical values.
handbook, halfpage
P
12
MLB621
L
(W)
handbook, halfpage
16
MLB622
PL
10
VS = 12.5 V
8
VS = 10.8 V
6
8
(W)
12
f = 800 MHz
f = 870 MHz
4
4
2
0
800
0
820
840
860
f (MHz)
880
40
0
40
80
120
Tmb (
o
C)
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
C
= 6 V; T
mb
= 25
°
C.
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
S
= 12.5 V; V
C
= 6 V.
Fig.5
Load power as a function of frequency;
BGY116D; typical values.
Fig.6
Load power as a function of mounting base
temperature; BGY116D; typical values.
1996 May 08
5
PCB Design
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