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BGY116E

Description
RF/Microwave Amplifier, 890 MHz - 950 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size161KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BGY116E Overview

RF/Microwave Amplifier, 890 MHz - 950 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

BGY116E Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Gain37.8 dB
Maximum input power (CW)10 dBm
Maximum operating frequency950 MHz
Minimum operating frequency890 MHz
Maximum operating temperature100 °C
Minimum operating temperature-30 °C
RF/Microwave Device TypesNARROW BAND HIGH POWER
Maximum voltage standing wave ratio3

BGY116E Related Products

BGY116E BGY116D
Description RF/Microwave Amplifier, 890 MHz - 950 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER RF/Microwave Amplifier, 800 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
Maker NXP NXP
Reach Compliance Code unknown unknown
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 37.8 dB 37.8 dB
Maximum input power (CW) 10 dBm 10 dBm
Maximum operating frequency 950 MHz 870 MHz
Minimum operating frequency 890 MHz 800 MHz
Maximum operating temperature 100 °C 100 °C
Minimum operating temperature -30 °C -30 °C
RF/Microwave Device Types NARROW BAND HIGH POWER NARROW BAND HIGH POWER
Maximum voltage standing wave ratio 3 3
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