R185CH12FJ8 datasheet, PDF - EEWORLD Datasheet

R185CH12FJ8: DescriptionSilicon Controlled Rectifier, 1030A I(T)RMS, 1200V V(DRM), 960V V(RRM), 1 Element, TO-200AB; CategoryAnalog mixed-signal IC Trigger device; File Size273KB，5 Pages; ManufacturerIXYS

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R185CH12FJ8 Overview

Silicon Controlled Rectifier, 1030A I(T)RMS, 1200V V(DRM), 960V V(RRM), 1 Element, TO-200AB

Parameter Name	Attribute value
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknow
Other features	FAST
Nominal circuit commutation break time	25 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
JEDEC-95 code	TO-200AB
JESD-30 code	O-CEDB-N2
Number of components	1
Number of terminals	2
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	1030 A
Maximum repetitive peak off-state leakage current	60000 µA
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	960 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Trigger device type	SCR
Base Number Matches	1

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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