d. Maximum under Steady State conditions is 130 °C/W.
www.
1
Junction-to-Ambient
b, d
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
80
55
Maximum
100
70
Unit
°C/W
New Product
DTS2305
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.2 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 2.8 A
V
GS
= - 1.8 V, I
D
= - 1.5 A
V
GS
= - 1.5 V, I
D
= - 0.5 A
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A, V
GS
= 0 V
- 0.8
30
20
13
17
T
C
= 25 °C
- 1.5
- 20
- 1.2
60
40
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.3
Ω
I
D
≅
- 4.3 A, V
GEN
= - 8 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 2.3
Ω
I
D
≅
- 4.3 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.4
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 5.3 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.3 A
14
7.6
0.8
3.1
2
0.20
1.00
4.00
2.00
0.09
0.40
5.20
2.30
4
0.3
1.50
6.00
3.00
0.14
0.60
7.80
3.50
µs
kΩ
21
12
nC
g
fs
V
DS
= - 10 V, I
D
= - 3.2 A
- 15
0.050
0.065
0.090
0.110
12
0.061
0.080
0.110
0.165
S
Ω
- 0.4
- 20
- 13
2.5
-1
±6
± 0.5
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.
2
New Product
DTS2305
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.5
10-2
10-3
I
GSS
- Gate Current (A)
1.2
I
GSS
- Gate Current (mA)
T
J
= 25 °C
0.9
10-4
10-5
T
J
= 150 °C
T
J
= 25 °C
10-6
10-7
10-8
0.6
0.3
0.0
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
10-9
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
Gate Current vs. Gate-Source Voltage
20
10
Gate Current vs. Gate-Source Voltage
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 5
V
thru 2.5
V
12
V
GS
= 2
V
8
8
6
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
4
V
GS
= 1.5
V
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.21
0.18
R
DS(on)
- On-Resistance (Ω)
0.15
V
GS
= 1.8
V
0.12
V
GS
= 1.5
V
0.09
0.06
0.03
0.00
0
4
8
12
16
20
V
GS
= 4.5
V
0
0
3
V
GS
= 2.5
V
8
Transfer Characteristics
V
GS
- Gate-to-Source
Voltage
(V)
I
D
= 5.3 A
6
V
DS
= 10
V
V
DS
= 5
V
V
DS
= 16
V
4
2
6
9
12
15
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
www.
3
New Product
DTS2305
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.5
1.4
V
GS
= 4.5
V,
2.5
V;
I
D
= 3.2 A
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
1.3
(Normalized)
1.2
1.1
V
GS
= 1.8
V;
I
D
= 1.5 A
1.0
0.9
0.8
0.7
- 50
0.1
0.0
T
J
= 150 °C
10
100
T
J
= 25 °C
1
- 25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.18
0.8
Soure-Drain Diode Forward Voltage
0.15
R
DS(on)
- On-Resistance (Ω)
I
D
= 3.2 A; T
J
= 125 °C
0.12
I
D
= 0.5 A; T
J
= 125 °C
0.09
V
GS(th)
(V)
0.7
I
D
= 250
µA
0.6
0.5
0.06
I
D
= 3.2 A; T
J
= 25 °C
I
D
= 0.5 A; T
J
= 25 °C
0.4
0.03
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.3
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
40
100
Threshold Voltage
Limited
by
R
DS(on)
*
30
10
100
µs
I
D
- Drain Current (A)
Power (W)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
1 s, 10 s
DC
20
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
0.01
0.1
1
10
100
Single Pulse Power, Junction-to-Ambient
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.
4
New Product
DTS2305
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
2.0
4
I
D
- Drain Current (A)
1.6
Po
w
er (W)
3
1.2
2
0.8
1
0.4
0
0
25
50
75
100
125
150
0.0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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