b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
D
www.daysemi.jp
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
10
V
GS
= 10
V
thru 3
V
I
D
- Drain Current (A)
56
I
D
- Drain Current (A)
8
42
V
GS
= 2
V
28
6
T
C
= 125 °C
4
T
C
= 25 °C
2
T
C
= - 55 °C
14
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.008
2500
C
iss
R
DS(on)
- On-Resistance (Ω)
0.007
V
GS
= 2.5
V
0.006
C - Capacitance (pF)
2000
Transfer Characteristics
1500
C
oss
1000
0.005
V
GS
= 4.5
V
0.004
V
GS
= 10
V
500
C
rss
0.003
0
14
28
42
56
70
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
6
V
DS
= 5
V
4
V
DS
= 15
V
R
DS(on)
- On-Resistance
(Normalized)
1.5
1.7
I
D
= 10 A
Capacitance
V
GS
= 2.5
V
V
GS
= 10
V
1.3
1.1
2
0.9
0
0
7
14
21
28
35
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
D
www.daysemi.jp
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
10
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.020
0.025
I
D
= 10 A
1
0.015
0.1
0.010
T
J
= 125 °C
0.005
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.3
I
D
= 250
µA
0.1
V
GS(th)
Variance
(V)
120
150
On-Resistance vs. Gate-to-Source Voltage
Power (W)
- 0.1
I
D
= 5 mA
- 0.3
90
60
- 0.5
30
- 0.7
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
BVDSS
DC
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
D
www.daysemi.jp
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
48
I
D
- Drain Current (A)
36
Package Limited
24
12
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
35
2.5
28
2.0
Power (W)
14
Power (W)
0
25
50
75
100
125
150
21
1.5
1.0
7
0.5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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