Drain-Source Body Diode Ratings and Characteristics
T
C
= 25
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10 V thru 4 V
R
DS(on)
- On-Resistance (Ω)
80
I
D
- Drain Current (A)
V
GS
= 3 V
0.006
V
GS
= 4.5 V
0.005
V
GS
= 10 V
0.004
0.007
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DTU50N03
60
40
20
0
0.0
0.003
0.5
1.0
1.5
2.0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Drain to Source Voltage vs. I
D
5
0.015
On-Resistance vs. Drain Current
R
DS(on)
- On-Resistance (Ω)
4
I
D
- Drain Current (A)
0.012
3
T
C
= 25 °C
2
0.009
T
J
= 150 °C
0.006
T
J
= 25 °C
0.003
1
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.6
1.2
1.8
2.4
3.0
0.000
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
180
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 8 V
4
V
DS
= 24 V
g
fs
- Transconductance (S)
135
T
C
= - 55 °C
T
C
= 25 °C
90
T
C
= 125 °C
45
2
0
0
6
12
18
24
30
0
0
10
20
30
40
50
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
Transconductance
Gate Charge
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
2.1
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DTU50N03
I
S
- Source Current (A)
T
J
= 150 °C
10
V
GS(th)
(V)
1.7
I
D
= 250 μA
1.3
T
J
= 25 °C
1
0.9
0.1
0.0
0.3
0.6
0.9
1.2
0.5
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
3750
V
DS
- Drain-to-Source Voltage (V)
43
Threshold Voltage
3000
C - Capacitance (pF)
C
iss
41
I
D
= 250 μA
39
2250
1500
C
oss
750
C
rss
0
0
5
10
15
20
25
30
37
35
33
- 50
- 25
0
25
50
75
100
125
150
175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Temperature (°C)
Capacitance
2.0
I
D
= 20 A
1.7
R
DS(on)
- On-Resistance
V
GS
= 10 V
I
D
- Drain Current (A)
Drain Source Breakdown vs. Junction Temperature
100
80
(Normalized)
1.4
V
GS
= 4.5 V
1.1
60
Package Limited
40
0.8
20
0.5
- 50
0
- 25
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
4
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
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DTU50N03
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
100 μA
10
1 ms
10 ms
100 ms
1 s, 10 s, DC
I
DAV
(A)
T
J
= 150 °C
10
T
J
= 25 °C
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
Limited
10
100
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0.01
0.1
1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
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