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R185CH12EK7

Description
Silicon Controlled Rectifier, 1030A I(T)RMS, 1200V V(DRM), 840V V(RRM), 1 Element, TO-200AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size273KB,5 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

R185CH12EK7 Overview

Silicon Controlled Rectifier, 1030A I(T)RMS, 1200V V(DRM), 840V V(RRM), 1 Element, TO-200AB

R185CH12EK7 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknow
Other featuresFAST
Nominal circuit commutation break time20 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
JEDEC-95 codeTO-200AB
JESD-30 codeO-CEDB-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1030 A
Maximum repetitive peak off-state leakage current60000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage840 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR
Base Number Matches1
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