BSZ0907ND
Dual N-Channel OptiMOS™ MOSFET
Features
·
Dual N-channel OptiMOS™ MOSFET
·
Enhancement mode
·
Logic level (4.5V rated)
·
Avalanche rated
·
100% Lead-free; RoHS compliant
·
Halogen-free according to IEC61249-2-21
Product Summary
Q1
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
PG-WISON-8
30
9.5
13
25
Q2
30
7.2
10
30
A
V
mW
Type
BSZ0907ND
Package
PG-WISON-8
Marking
0907ND
Lead Free
Yes
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
1)
Parameter
Symbol Conditions
Q1
Continuous drain current
I
D
T
C
=70 °C
T
A
=25 °C
2)
T
A
=70 °C
2)
T
A
=25 °C
3)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
A
=25 °C
2)
T
A
=25 °C
3)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
Q2
30
13.8
11.1
8.5
40
20
±20
1.9
0.70
2.3
0.86
Unit
25
11.1
8.9
6.7
A
T
C
=25 °C
I
D
=9 A,
R
GS
=25
W
mJ
V
W
T
j
,
T
stg
-55 ... 150
55/150/56
°C
Remark: only one of both transistors active
Rev.2.0
page 1
2013-06-14
BSZ0907ND
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction -
case
Thermal resistance, junction -
ambient
1)
Q1
R
thJC
Q2
Q1
R
thJA
Q2
Q1
Q2
minimal footprint,
steady state
3)
6 cm
2
cooling area
2)
-
-
-
-
-
-
-
-
-
-
-
-
4
3.8
65
55
180
145
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Q1
Q2
Gate threshold voltage
Q1
V
GS(th)
Q2
Zero gate voltage drain current
Q1
I
DSS
Q2
Q1
Q2
Gate-source leakage current
Q1
I
GSS
Q2
Drain-source on-state
resistance
Q1
R
DS(on)
Q2
Q1
V
GS
=10 V,
I
D
=9 A
Q2
Gate resistance
Q1
R
G
Q2
Transconductance
Q1
g
fs
Q2
2)
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
-
-
30
V
V
DS
=V
GS
,
I
D
=250 µA
1.2
1.6
2
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=150 °C
-
-
1
µA
-
-
100
V
GS
=20 V,
V
DS
=0 V
-
-
-
10.4
8.3
7.6
6
3.5
1.2
33
37
100
13
10
9.5
7.2
7.0
2.4
-
-
nA
mW
V
GS
=4.5 V,
I
D
=9 A
-
-
-
1.8
0.6
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=9 A
16
18
W
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
device mounted on a minimum pad (one layer, 70 µm thick)
Rev.2.0
page 2
2013-06-14
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