K7N803201B-QI160 datasheet, PDF

Datasheet> All Categories > storage> storage> K7N803201B-QI160

K7N803201B-QI160: DescriptionZBT SRAM, 256KX32, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100; Categorystorage storage; File Size274KB，23 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

Download Datasheet Parametric Compare View All

K7N803201B-QI160 Overview

ZBT SRAM, 256KX32, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7N803201B-QI160 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	3.5 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100
length	20 mm
memory density	8388608 bit
Memory IC Type	ZBT SRAM
memory width	32
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX32
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

Preview

Download Datasheet

View All

K7N803601B

K7N803201B

K7N801801B

Document Title

256Kx36/x32 & 512Kx18 Pipelined NtRAM

256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM

Revision History

Rev. No.

0.0

0.1

0.2

1.0

History

1. Initial document.

1. Add x32 org part and industrial temperature part

1. change scan order(1) form 4T to 6T at 119BGA(x18)

1. Final spec release

2. Change I

SB2

form 50mA to 60mA

Change ordering information( remove 225MHz at Nt-Pipelined)

1. Delete 119BGA package

Draft Date

May. 18. 2001

Aug. 11. 2001

Aug. 28 .2001

Nov. 16. 2001

Remark

Preliminary

Final

2.0

2.1

April. 01. 2002

April. 04. 2003

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

April 2003

Rev 2.1

K7N803201B-QI160 Related Products

	K7N803201B-QI160	K7N803601B-HC130	K7N803201B-QC130	K7N803201B-QC160	K7N803201B-QI130
Description	ZBT SRAM, 256KX32, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	ZBT SRAM, 256KX36, 4.2ns, CMOS, PBGA119, BGA-119	ZBT SRAM, 256KX32, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	ZBT SRAM, 256KX32, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100	ZBT SRAM, 256KX32, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	QFP	BGA	QFP	QFP	QFP
package instruction	LQFP,	BGA,	LQFP,	LQFP,	LQFP,
Contacts	100	119	100	100	100
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3.5 ns	4.2 ns	4.2 ns	3.5 ns	4.2 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100	R-PBGA-B119	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
length	20 mm	22 mm	20 mm	20 mm	20 mm
memory density	8388608 bit	9437184 bit	8388608 bit	8388608 bit	8388608 bi
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	32	36	32	32	32
Number of functions	1	1	1	1	1
Number of terminals	100	119	100	100	100
word count	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	70 °C	85 °C
organize	256KX32	256KX36	256KX32	256KX32	256KX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	BGA	LQFP	LQFP	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	GRID ARRAY	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
Terminal form	GULL WING	BALL	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	1.27 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	QUAD	BOTTOM	QUAD	QUAD	QUAD
width	14 mm	14 mm	14 mm	14 mm	14 mm
Maximum seat height	1.6 mm	-	1.6 mm	1.6 mm	1.6 mm

Recommended Resources

TV grid signal generator circuit

RCC complete working circuit

Use current relay as motor Y conversion energy-saving control circuit

Switching regulated power supply composed of μA741

Modulator circuit for indicating low voltage high frequency signals

Very cool sine wave generating circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components