b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 3 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
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5
DTC2059
V
GS
= 2.5 V
4
12
3
8
V
GS
= 2 V
2
T
C
= 25 °C
1
4
V
GS
= 1.5 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
T
C
= 125 °C
0
0
0.5
1.0
T
C
= - 55 °C
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.08
V
GS
= 2.5 V
1500
R
DS(on)
- On-Resistance (Ω)
Transfer Characteristics
1800
0.06
C - Capacitance (pF)
1200
C
iss
0.04
V
GS
= 3.6 V
900
600
C
oss
300
C
rss
0.02
V
GS
= 4.5 V
0
0
4
8
12
16
20
0
0
3
6
9
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On Resistance vs. Drain Current
10
I
D
= 6.5 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.6
V
GS
= 4.5 V; 3.6 V; I
D
= 4.9 A
1.4
R
DS(on)
- On-Resistance
8
V
DS
= 10 V
6
V
DS
= 5 V
V
DS
= 16 V
4
(Normalized)
1.2
V
GS
= 2.5 V; I
D
= 2 A
1.0
2
0.8
0
0
5
10
15
20
25
30
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.12
I
D
= 4.9 A
0.10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
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DTC2059
T
J
= 150 °C
10
0.08
0.06
T
J
= 125 °C
0.04
T
J
= 25 °C
0.02
1
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temperature
1.2
1.1
40
50
On-Resistance vs. Gate-to-Source Voltage
1.0
I
D
= 250 μA
0.9
0.8
0.7
10
Power (W)
V
GS(th)
(V)
30
20
0.6
0.5
- 50
0
10
-3
- 25
0
25
50
75
100
125
150
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
12
6
www.din-tek.jp
DTC2059
5
9
I
D
- Drain Current (A)
4
Package Limited
6
Power (W)
75
100
125
150
3
2
3
1
0
0
25
50
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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