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N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
80
R
DS(on)
()
0.075 at V
GS
= 10 V
I
D
(A)
a
3.5
Q
g
(Typ.)
7.3 nC
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
SO-8
S1
1
G1
2
S2
G2
3
4
Top
View
8
7
6
5
D1
D1
D1
D2
D2
G1
S1
G2
D2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
C
Maximum
80
±30
3.5
2.9
18
16
12.8
2
1.3
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
mJ
W
°
C
Repetitive avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
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Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=80V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±30V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3.5A
T
J
=125°
C
V
DS
=5V, I
D
=3.5A
I
S
=1A,V
GS
=0V
C
Min
80
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Pulsed Body-diode Current
1
5
100
3.5
18
62
113.0
15
0.77
1
2.5
18
510
640
40
20
1.8
11
5.5
5
1.2
7.2
2.2
17
2
14
35
20
50
26
65
770
52
30
2.7
13
7
6
1.7
75
135
4.2
5
µA
nA
V
A
mΩ
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=40V, f=1MHz
28
12
0.9
8
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=3.5A, dI/dt=300A/µs
2
V
GS
=10V, V
DS
=40V, I
D
=3.5A
4
4
0.7
V
GS
=10V, V
DS
=40V, R
L
=8Ω,
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=3.5A, dI/dt=300A/µs
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using
≤
10s junction-to-ambient thermal resistance.
C,
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
C.
initialT
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
16
6V
12
I
D
(A)
I
D
(A)
12
7V
16
20
V
DS
=5V
8
5.5V
4
5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
100
Normalized On-Resistance
90
R
DS(ON)
(m
Ω
)
80
70
60
50
0
12
16
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
4
8
V
GS
=10V
8
125°C
4
25°C
0
3
4
5
6
7
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=10V
I
D
=3.5A
17
5
2
10
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
1.0E+02
150
I
D
=3.5A
130
125°C
R
DS(ON)
(m
Ω
)
I
S
(A)
110
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
40
90
70
25°C
1.0E-04
1.0E-05
50
4
8
12
16
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=40V
I
D
=3.5A
8
Capacitance (pF)
800
C
iss
1000
V
GS
(Volts)
6
600
4
400
C
oss
200
C
rss
2
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
40
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
80
100
I
D
(A), Peak Avalanche Current
100.0
T
A
=25°C
10.0
10
T
A
=125°C
I
D
(Amps)
T
A
=100°C
R
DS(ON)
limited
10µs
100µs
1ms
10ms
1.0
10ms
100ms
T
A
=150°C
0.1
T
J(Max)
=150°
C
T
A
=25°
C
100m
DC
10
1
0.000001
10s
100
0.00001
0.0001
0.0
0.1
1
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
T
A
=25°C
100
Power (W)
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
P
D
T
on
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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